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IRLML5203GTRPBF
-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
International
TOR Rectifier
PD - 96166
IRLML5203GPbF
HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
RDS(on) max (m9) ID
98@Vss = -10V -3.0A
165@VGS = -4.5V -2.6A
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit providesthe designerwith an extremely efficient
device for use in battery and load management
AR 7-_.-' -
applications. Micr03TM
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallestfootprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -30 V
ID © TA = 25°C Continuous Drain Current, Vss © -10V -3.0
ID @ TA-- 70°C Continuous Drain Current, Vss @ -10V -2.4 A
IDM Pulsed Drain Current © -24
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
l/ss Gate-to-Source Voltage 1 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 100 °C/W
1
07/22/08
IRLML5203GPbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V l/tss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.019 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - -- 98 mg Vss = -10V, ID = -3.0A ©
- - 165 Vss = -4.5V, ID = -2.6A ©
Vegan) Gate Threshold Voltage -1.0 - -2.5 V Vos = Vas, ID = -250uA
gfs Forward Transconductance 3.1 - - S VDs = -10V, ID = -3.0A
loss Drain-to-Source Leakage Current _- _- lf, PA $2: : :m It : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A l/tss = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
Qg Total Gate Charge - 9.5 14 ID = -3.0A
Qgs Gate-to-Source Charge - 2.3 3.5 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - 1.6 2.4 Vas = -10V C)
two”) Turn-On Delay Time - 12 - VDD = -15V ©
tr Rise Time - 18 - ns ID = -1.0A
td(0ff) Turn-Off Delay Time - 88 - Rs = 6.09
if Fall Time - 52 - l/tss = -10V
Ciss Input Capacitance - 510 - Vss = 0V
Coss Output Capacitance - 71 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 43 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.3 A showing the
ISM Pulsed Source Current - _ -24 integral reverse a
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.3A, Vss = 0V ©
trr Reverse Recovery Time - 17 26 ns To = 25°C, IF = -1.3A
Qrr Reverse Recovery Charge - 12 18 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 400ps; duty cycle 3 2%.
Surface mounted on FR-4 board, ts Ssec.
