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IRLML5203-IRLML5203TR
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Description
These P-channel MOSFETs from International Rectiher
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designerwith an extremely efficient
device for use in battery and load management
applications.
PROVISIONAL
PD - 93967A
IRLML5203
HEXFET® Power MOSFET
RDS(on) max (mo) In
98@VGS = -10V -3.0A
165@VGS = -4.5V -2.6A
A thermally enhanced large pad leadframe has been Micro3TM
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFETwith the industry's
smallestfootprint. This package, dubbed the MicroBTM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micr03 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0
ID @ TA-- 70°C Continuous Drain Current, VGs @ -10V -2.4 A
IDM Pulsed Drain Current CD -24
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/''C
Ves Gate-to-Source Voltage * 20 V
To, Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 100 oCNV
1
04/30/03
IRLML5203 PROVISIONAL International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V N/ss = 0V, lo = -250pA
AV(BR)ross/ATU Breakdown Voltage Temp. Coemcient - 0.019 - V/°C Reference to 25''C, ID = -1mA
RDSW Static Drain-to-Source On-Resistance - - 98 mn VGS = -10V, ID = -3.0A ©
- - 165 Vss = -4.5V, ID = -2.6A ©
Vesah) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 3.1 - - S Vos = -10V, ID = -3.OA
. - - -1.0 Vos = -24V, VGS = 0V
I Drain-to-Source Leaka e Current
DSS g - - -5.0 PA Vos = -24V, VGS = OV, TJ = 70°C
I Gate-to-Source Forward Leakage - - -100 n A N/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 20V
q, Total Gate Charge - 9.5 14 ID = -3.0A
Qgs Gate-to-Source Charge - 2.3 3.5 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - 1.6 2.4 VGS = -10V C)
td(on) Turn-On Delay Time - 12 - VDD = -15V ©
tr Rise Time - 18 - ns ID = -1.OA
td(oit) Turn-Off Delay Time - 88 - Rs = 6.09
If Fall Time - 52 - N/ss = -10V
Ciss Input Capacitance - 510 - Vss = 0V
Coss Output Capacitance - 71 - pF Vros = -25V
Crss Reverse Transfer Capacitance - 43 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 MOSFET symbol D
(Body Diode) - - - 2 A showing the
ISM Pulsed Source Current 24 integral reverse G
(Body Diode) co - - p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.3A, VGS = 0V ©
trr Reverse Recovery Time - 17 26 ns To = 25°C, IF = -1.3A
Qrr Reverse Recovery Charge - 12 18 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts Ssec.
max. junction temperature.
© Pulse width 3 400ps; duty cycle 3 2%.
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