IRLML5103 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
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IRLML5103
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
PD - 91260F
IRLML5103
HEXFET© Power MOSFET
VDSS = -30V
RDS(on) = 0.609
standard SOT-23 package to produce a HEXFET Power MicroSTM
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ -10V -O.76
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -0.61 A
IDM Pulsed Drain Current (D -4.8
PD@TA= 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/'C
Vas Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 'C
Thermal Resistance
Parameter Typ. Max. Units
Ram Maximum Junction-to-Ambient BD - 230 l "CMI
1
12/14/11
IRLML5103
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage -30 - - V l/tss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.029 - V/°C Reference to 25°C, ID = -1mA
. . . - - 0.60 Vss = -10V, ID = -O.60A ©
RDS(ON) Static Drain-to-Source On-Resistance - - 1.0 Q Vss = -4.5V, ID = -0.30 A ©
Vssim) Gate Threshold Voltage -1.0 - - V VDs = VGs, ID = -250pA
gfs Forward Transconductance 0.44 - - S VDs = -1OV, ID = -0.30A
loss Drain-to-Source Leakage Current - - -1.0 pA Vrvs = -24V, V68 = 0V
- - -25 Vros = -24V, VGs = 0V, Tu = 125''C
less Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
Gate-to-Source Reverse Leakage - - 100 l/ss = 20V
% Total Gate Charge - 3.4 5.1 ID = -O.60A
Qgs Gate-to-Source Charge - 0.52 0.78 nC VDs = -24V
di Gate-to-Drain ("Miller") Charge - 1.1 1.7 Vss = -10V, See Fig. 6 and 9 ©
tam) Turn-On Delay Time - 10 - VDD = -15V
tr Rise Time - 8.2 - ID = -0.60A
tam) Turn-Off Delay Time - 23 - ns R9 = 6.29
tt Fall Time - 16 - RD = 259, See Fig. 10 ©
Ciss Input Capacitance - 75 - l/ss = 0V
Coss Output Capacitance - 37 - l pF VDs = -25V
Crss Reverse Transfer Capacitance - 18 - l f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - -O.54 -
(Body Diode) A showmg the
ISM Pulsed Source Current - - - 4.8 - Integral reverse G
(Body Diode) (D p-n Junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -0.60A, l/ss = 0V ©
trr Reverse Recovery Time - 26 39 ns To = 25''C, IF = -0.60A
Qrr Reverse RecoveryCharge - 2O 30 nC di/dt = 1OOA/ps ©
Notes:
(O Repetitive rating; pulse width limited by
(3 Pulse width s: 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© ISD S -0.60A, di/dt f 110/Ups, VDD S V(BR)DSS:
Tuf 150°C
60 Surface mounted on FR-4 board, t S Ssec.
