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IRLML2502TRPBF-IRLML2502TRPBF--
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
1Nl,lhll,fGMR'0'
HEXFET® Power MOSFET
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free
VDSS = 20V
RDSM, = 0.04592
Description
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designerwith an extremely
efficientand reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the MicroSTM, is ideal for applications where printed circuit
board space is at a premium. The low profile(<1.1mm)ofthe Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
MicrosTM
Standard Pack
Base Part Number Package Type Form Quantity Orderable Part Number
IRLML2502TRPbF Micro3w (SOT-23) Tape and Reel 3000 IRLML2502TRPbF
Absolute Maximum Ratings
Parameter Max. Units
I/ns Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ 4.5V 4.2
ID @ TA-- 70°C Continuous Drain Current, Vas @ 4.5V 3.4 A
IDM Pulsed Drain Current (D 33
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Ves Gate-to-Source Voltage * 12 V
Tu, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambien) 75 100 °C/W
© 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
I(0,iR,
Electrical Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ygirausi Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, b = 250uA
AmeDss/ATJ Breakdown Voltage Temp. Coefficient -- 0.01 - V/°C Reference to 25°C, ID = 1.0mA
men) State Drain-to-Source On-Hesistance - 0.035 0.045 n Vss = 4.5V, ID = 4.2A 2
- 0.050 0.080 Vas = 2.5V, ID = 3.6A ©
Vegan, Gate Threshold Voltage 0.60 - 1.2 V Vos = Vas, ID = 250pA
Aves...“ Gate Threshold Voltage Coefficient - -3.2 - mV/°C
gfs Forward Transconductance 5.8 - - S vu, = 10V, ID = 4.0A
loss Drain-to-Source Leakage Current - - 1.0 p A Vros = 16V, Vas = 0V
- - 25 Vros = 16V, Vas = 0V, T, = 70°C
lass Gate-to-Source Forward Leakage - - 100 n A Vas = 12V
Gate-to-Source Reverse Leakage - - -100 Vas = -12V
2, Total Gate Charge - 8.0 12 ID = 4.0A
Qu,, Gate-to-Source Charge - 1.8 2.7 nC Vros = 10V
qu Gate-to-Drain ("Miller") Charge - 1.7 2.6 Vas = 5.0V (3
two,” Turn-On Delay Time - 7.5 - VDD = 10V
t, Rise Time - 10 - ns ID = 1.0A
1mm Turn-Off Delay Time - 54 - Ra = 69
t Fall Time - 26 - RD = lon Q)
Ciss Input Capacitance - 740 - Vas = 0V
Coss Output Capacitance - 90 - PF Vos = 15V
Crss Reverse Transfer Capacitance - 66 - f = 1.0MHz
Source-Drain Rating and Characteristics
Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current - - 1.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 33 integral reverse G
(Body Diode) C) Ir-n iunction diode. S
Va, Diode Forward Voltage - - 1.2 V To = 25°C, Is = 1.3A, Vss = 0V 2
t,, Reverse Recovery Time - 16 24 ns To = 25°C, IF = 1.3A
0,, Reverse Recovery Charge - 8.6 13 nC di/dt = 100A/ps <2)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Pulse width S 300ps; duty cycle g 2%.
co Surface mounted on FR-4 board, ts: Ssec.
© 2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
