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IRLML2502GTRPBF
20V Single N-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
PD - 96163A
|RLML2502GPbF
HEXFET® Power MOSFET
International
TOR Rectifier
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint G
Low Profile (<1.1mm)
Available in Tape and Reel D
Fast Switching S RDS(on) = 0-0459
Lead-Free
Halogen-Free
VDSS = 20V
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniquesto achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET© power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been M'Crosm
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the MicroSTM, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1 .1mm) of the Micros allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIAcards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID © TA = 25°C Continuous Drain Current, l/ss © 4.5V 4.2
ID @ TA-- 70°C Continuous Drain Current, l/ss © 4.5V 3.4 A
IDM Pulsed Drain Current (D 33
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Vss Gate-to-Source Voltage i 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient) 75 100 "C/W
1
09/25/12
IRLML2502GPbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vosmoss Drain-to-Source Breakdown Voltage 20 - - V Ves = 0V, b = 250uA
AVomrss/ATo Breakdown Voltage Temp. Coefficient - 0.01 - V/°C Reference to 25°C, ID = 1.0mA
Row") Static Drain-to-Source On-Resistance - 0.035 0.045 n Vos = 4.5V, ID = 4.2A <2)
- 0.050 0.080 I/ss = 2.5V, ID = 3.6A <2)
Ysuth) Gate Threshold Voltage 0.60 - 1.2 V Vas = Vas, ID = 25 Op A
$111) Gate Threshold Voltage Coefficient - -3.2 - mV/°C
gfs Forward Transconductance 5.8 -- - S I/us = 10V, ID = 4.0A
bss Drain-to-Source Leakage Current - -- 1.0 p A I/usa = 16V, L/as = 0V
- - 25 va =16V,Vss = 0V, To = 70°C
less Gate-to-Source Forward Leakage - -- 100 n A Veg = 12V
Gate-to-Source Reverse Leakage - -- -100 I/ss = -12V
00 Total Gate Charge - 8.0 12 ID = 4.0A
0., Gate-to-Source Charge - 1.8 2.7 nC Vas = 10V
qu Gate-to-Drain ("Miller") Charge - 1.7 2.6 Vas = 5.0V ©
two") Turn-On Delay Time - 7.5 - Va, = 10V
t, Rise Time - 1O - ns ID = 1.0A
1mm Turn-Off Delay Time - 54 - Rs = 69
t, Fall Time - 26 - RD: lon ©
2, Input Capacitance - 740 - Vas = 0V
COS Output Capacitance - 90 - PF Vas = 15V
c,, Reverse Transfer Capacitance - 66 - f = 1.0MHz
Source-Drain Rating and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 33 integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.2 V T, = 25°C, ls = 1.3A, Vas = 0V ©
t, Reverse Recovery Time - 16 24 ns T, = 25°C, IF = 1.3A
Qrr Reverse Recovery Charge - 8.6 13 nC di/dt = 100A/ps 2
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Pulse width
3 300ps; duty cycle f 2%.
© Surface mounted on FR-4 board, ts Ssec.
