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IRLML2502-IRLML2502PBF-IRLML2502TR
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
PD - 93757C
IRLML2502
HEXFET® Power MOSFET
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
VDSS = 20V
RDS(on) = 0.0459.
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This beneht, combined
with the fast switching speed and ruggedized device design
that HEXFET© power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest MiCro3m
footprint. This package, dubbed the Micro3TM, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
In @ TA-- 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
IDM Pulsed Drain Current (D 33
PD @TA = 25°C Power Dissipation 1.25 W
PD @TA = 70''C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage * 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ROJA Maximum Junction-to-Ambient) 75 100 "C/W
1
04/30/03
IRLML2502
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.01 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.035 0.045 VGS = 4.5V, ID = 4.2A ©
- 0.050 0.080 Vss = 2.5V, ID = 3.6A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vros = Was, ID = 250PA
Ts Forward Transconductance 5.8 - - S VDs = 10V, ID = 4.0A
loss Drain-to-Source Leakage Current T, : 12: PA x3: : 112: Y]: : g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 8.0 12 lo = 4.0A
Qgs Gate-to-Source Charge - 1.8 2.7 nC VDs = 10V
di Gate-to-Drain ("Miller") Charge - 1.7 2.6 N/ss = 5.0V ©
tam") Turn-On Delay Time - 7.5 - VDD = 10V
tr Rise Time - 10 - ns ID = 1.0A
tanti) Turn-Off Delay Time - 54 - RG = 69
tr Fall Time - 26 - Ro = 109 ©
Ciss Input Capacitance - 740 - VGS = 0V
Coss Output Capacitance - 90 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 66 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 A showing the
ISM Pulsed Source Current - - 33 integral reverse G
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V T: = 25°C, Is = 1.3A, VGS = 0V ©
trr Reverse Recovery Time - 16 24 ns T: = 25°C, IF = 1.3A
Qrr Reverse Recovery Charge - 8.6 13 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Pulse width S 300ps; duty cycle 5 2%.
Surface mounted on FR-4 board, ts: Ssec.
