IRLML2244TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97631IRLML2244TRPbFHEXFET Power MOSFETV-20 VDSV± 12 VGS Max G 1RDS(on) max 54 mΩ 3 D(@V = -4 ..
IRLML2246TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97630AIRLML2246TRPbFHEXFET Power MOSFETV-20 VDS
IRLML2244TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Infernoti
IEER Rectifier
PD - 97631
IRLML2244TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(@ Vss = -4.5V)
RDS(on) max
(@ Vss = -2.5V)
95 m9 8
Micro3TM (SOT-23)
Application(s)
IRLML2244TRPbF
. System/Load Switch
Features and Benefits
Features
Low RDS(cn) ( S 54mf2)
Industry-standard pi
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Absolute Maximum Ratings
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
2) Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, Vss @ -4.5V -3.4 A
IDM Pulsed Drain Current -18
PD @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Vas Gate-to-Source Voltage t 12 v
T J, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ru, Junction-to-Ambient © - 100 “CW
RNA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes C) through Ci) are on page 10
1
1/24/11
IRLIVI L2244TRPbF International
TOR Rectifier
Electric Characteristics © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vss = 0V, ID = -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.01 - V/°C Reference to 25°C, b = -1mA
Roswn) Static Drain-to-Source On-Resistance - 42 54 mn l/ss = M.5V, ID = -4.3A ©
- 71 95 Vss = -2.5V, ID = -3.4A ©
VGS(th) Gate Threshold Voltage -O.4 -- -1.1 V l/rss = Ves, ID = -10pA
loss Drain-to-Source Leakage Current - - 1 pA Vos =-16V, Vas = 0V
-- -- 150 l/rss = -16V, Veg = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Ves = 12V
Gate-to-Source Reverse Leakage - - 100 Vss = -12V
Fla Internal Gate Resistance - 8.9 - Q
gts Forward Transconductance 6.5 - - S VDS = -1OV, ID =-4.3A
q, Total Gate Charge - 6.9 - lo = -4.3A
Qgs Gate-to-Source Charge - 1.0 - " Vos =-10V
di Gate-to-Drain ("Miller") Charge -- 2.9 -- Vss = -4.5V ©
tam) Turn-On Delay Time - 7.0 - VDD =-10V©
t, Rise Time -- 12 -.-.- ns ID = -1A
td(ott) Turn-Off Delay Time - 34 - Rs = 6.89
t, Fall Time - 25 - Vss = -4.5V
Ciss Input Capacitance - 570 - Vss = 0V
Coss Output Capacitance - 160 - PF Vos = -16V
Crss Reverse Transfer Capacitance - 110 - f = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - --.- -1 .3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- _ -18 integral reverse G s
(Body Diode) (D p-n junction diode.
l/so Diode Forward Voltage - - -1.2 V T, = 25°C, ls = -4.3A, l/ss = 0V ©
trr Reverse Recovery Time - 21 32 ns T, = 25°C, Vn = -16V, |F=-4.3A
Qrr Reverse Recovery Charge -- 9.0 14 nC di/dt = 100A/ps ©
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