IRLML2030TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97432IRLML2030TRPbFHEXFET Power MOSFETV30 VDSG 1V± 20 VGS MaxRDS(on) max 3 D100 m
IRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
PD - 97432
IRLML2030TRPbF
H EXFET© Power MOSFET
V05 30 V
Vas Max 2 20 V G
RDS(on) max
100 mn 3 D
(OI/ss = 10V)
RDS(on) max 154 mn s Micro3TM (SOT-23)
(@Ves = 4.5V) IRLML2030TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features Benefits
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen 2 Environmentally friendly
MSL1 Increased reliability
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
In © TA = 25°C Continuous Drain Current, Vss @ 10V 2.7
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 2.2 A
bs, Pulsed Drain Current 11
Pry @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 WPC
l/ss Gate-to-Source Voltage i 20 v
T J, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient © _ 100 °CNV
ROJA Junction-to-Ambient (t<10s) © -- 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
11/4/09
IRLML2030TRPbF
International
TOR Rectifier
Electric Characteristics © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
AV(E,R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = 1mA
Roman) Static Drain-to-Source On-Resistance - 123 154 m9 Vss = AEN, ID = 2.2A ©
- 80 100 Ves =10V, ID = 2.7A ©
VGSM) Gate Threshold Voltage 1.3 1.7 2.3 V Vos = Vas, ID = 25pA
IDSS Drain-to-Source Leakage Current - - 1 pA l/rss =24V, l/ss = 0V
- - 150 l/os = 24V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
Rs Internal Gate Resistance - 7.6 - Q
gfs Forward Transconductance 2.6 - - S Vos = 10V, ID = 2.7A
Qg Total Gate Charge - 1.0 - ID = 2.7A
Qgs Gate-to-Source Charge - 0.34 - nC Vos =15V
di Gate-to-Drain ("Miller") Charge - 0.34 - VGS = 4.5V C)
td(on) Turn-On Delay Time - 4.1 - Va, =15V©
t, Rise Time - 3.3 - ns ID = 1.0A
tdwff) Turn-Off Delay Time -- 4.5 -- Rs = 6.89
t, Fall Time - 2.9 - l/ss = 4.5V
Ciss Input Capacitance - 110 - Vss = 0V
Coss Output Capacitance - 29 - PF l/os = 15V
Crss Reverse Transfer Capacitance - 12 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 1.6 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 1 1 integral reverse G 's
(Body Diode) CD p-n junction diode. q
l/sn Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 2.7A, Vas = 0V ©
trr Reverse Recovery Time - 9.0 14 ns T, = 25°C, l/n = 15V, |F=2.7A
l Reverse Recovery Charge - 0.3 0.4 nC di/dt = 100A/ps ©
2
