IRLML0100TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97157IRLML0100TRPbFHEXFET Power MOSFETV100 VDSG 1V± 16 VGS MaxRDS(on) max 3 D220 m
IRLML0100TRPBF
100V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
PD - 97157
" . . |RLML0100TRPbF
TOR Rech fl er
HEXFET© Power MOSFET
Vos 1 00 V
Vss Max i 16 V G
RDS(on) max
220 mn D
(@Ves = 10V)
Rrosion) max 235 m f2 S Micro3TM (SOT-23)
(@Ves = 4.5V) |RLML0100TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features Benefits
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen => Environmentally friendly
MSL1 Increased reliability
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 100 V
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V 1.6
ID @ TA = 70°C Continuous Drain Current, N/ss @ 10V 1.3 A
IDM Pulsed Drain Current 7.0
Pro @TA = 25°C Maximum Power Dissipation 1.3 W
Pro @1-A = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
VGs Gate-to-Source Voltage * 16 V
T J, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient © - 100 ''CAN
ReJA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
11/24/09
|RLMLO1OOTRPbF
International
TOR Rectifier
Electric Characteristics @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 190 235 mn VGS = 4.5V, ID = 1.3A ©
- 178 220 I/ss =10V,ID =1.6A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V VDS = VGS, b = 25pA
IDSS Drain-to-Source Leakage Current - - 20 pA Ws =100V, VGS = 0V
- - 250 Ws = 100V, Vss = 0V, T: = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
RG Internal Gate Resistance - 1.3 - Q
gts Forward Transconductance 5.7 - - S Ws = 50V, ID = 1.6A
Qg Total Gate Charge - 2.5 - ID = 1.6A
Qgs Gate-to-Source Charge - 0.5 - nC Ws =50V
di Gate-to-Drain ("Miller") Charge - 1.2 - VGS = 4.5V ©
tam”) Turn-On Delay Time - 2.2 - VDD =50V©
tr Rise Time - 2.1 - ns ID =1.0A
tum Turn-Off Delay Time - 9.0 - RG = 6.89
tf Fall Time - 3.6 - VGS = 4.5V
Ciss Input Capacitance - 290 - VGS = 0V
Coss Output Capacitance - 27 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 13 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 1.1 MOSFET symbol / C)
(Body Diode) A showing the g
ISM Pulsed Source Current - - 7.0 integral reverse Ch
(Body Diode) OD p-n junction diode. q
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 1.1A, Vss = 0V ©
trr Reverse Recovery Time - 20 30 ns TJ = 25°C, I/e = 50V, IF=1.1A
Q,, Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
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