IRLML0060TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97439AIRLML0060TRPbFHEXFET Power MOSFETV60 VDS
IRLML0060TRPBF
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
IEER Rectifier
PD - 97439A
IRLML0060TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
116 mn
Micro3TM (SOT-23)
IRLML0060TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Absolute Maximum Ratings
Benefits
Multi-vendor compatibility
results in Easier manufacturing
=> Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vns Drain-Source Voltage 60 V
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 2.7
ID © TA = 70°C Continuous Drain Current, Vss @ 10V 2.1 A
los, Pulsed Drain Current 11
Pr, @TA = 25°C Maximum Power Dissipation 1.25 W
Pro @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 WPC
Ves Gate-to-Source Voltage 1 16 V
To, Tam Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient © - 100 °C/W
ROJA Junction-to-Ambient (t<1OS) (D - 99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
03/09/12
IRLML0060TRPbF
International
TOR Rectifier
Electric Characteristics © To = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 -- -- V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.06 - V/°C Reference to 25°C, lo = 1mA
. . . - 98 116 VGS=4.5V, |D=2.2A®
Rrosom Static Drain-to-Source On-Resistance m9
- 78 92 Vss =10V, ID = 2.7A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.5 v Vos = Vss, b = 25pA
loss . - - 20 Vos = 60V, Vas = 0V
Drain-to-Source Leakage Current pA
- - 250 VDS = 60V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
Re Internal Gate Resistance - 1.6 - Q
gfs Forward Transconductance 7.6 - - S Vrrs = 25V, ID = 2.7A
a, Total Gate Charge - 2.5 -- lo = 2.7A
Qgs Gate-to-Source Charge - 0.7 - nC Vos =30V
di Gate-to-Drain ("Miller") Charge - 1.3 - I/ss = 4.5V ©
tum) Turn-On Delay Time - 5.4 - VDD = 30V©
t, Rise Time - 6.3 - lo = 1.0A
tam) Turn-Off Delay Time - 6.8 - ns Rs = 6.89
tf Fall Time - 4.2 - Vss = 4.5V
Ciss Input Capacitance -- 290 -- Vss = 0V
Coss Output Capacitance - 37 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 21 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 1 6 MOSFET symbol a
(Body Diode) . A showing the (i'
ISM Pulsed Source Current integral reverse C)
- - 11 \4/
(Body Diode) C) p-n iunction diode. q
Vso Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 2.7A, l/ss = 0V ©
in Reverse Recovery Time - 14 21 ns T, = 25°C, VR = 30V, |F=1.6A
er Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
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