IRLML0030TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 96278BIRLML0030TRPbFHEXFET Power MOSFETV 30 VDSV ± 20 VGS MaxG 1RDS(on) max 27mΩ3 D(@V = 10V ..
IRLML0040 ,40V Single N-Channel HEXFET Power MOSFET in a Micro3 packageFeatures and BenefitsBenefits
IRLML0040TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a Micro3 packagePD - 96309AIRLML0040TRPbFHEXFET Power MOSFETV VDSS 40V ± 16 VGS MaxG 1R DS(on) max56 mΩ(@V = 10V) ..
IRLML0060TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97439AIRLML0060TRPbFHEXFET Power MOSFETV60 VDS
IRLML0030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
IEER Rectifier
PD - 96278B
IRLML0030TRPbF
H EXFET© Power MOSFET
V03 30 V
Vas Max 1 20 V G
RDS(on) max
(@Vss = 10V) D
DS(on) max 40 mg s Micro3TM (SOT-23)
(@Ves = 4.5V) IRLML0030TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features Benefits
Low RDs(on)( s 27mf2) Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen => Environmentally friendly
MSL1, Industrial qualification Increased reliability
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 5.3
ID @ TA = 70°C Continuous Drain Current, Ves © 10V 4.3 A
IDM Pulsed Drain Current 21
PD @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
Ves Gate-to-Source Voltage 1 20 V
TJ.TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ram Junction-to-Ambient © - 100 °C/W
Ram Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
02/29/12
|RLMLOO3OTRPbF International
TOR Rectifier
Electric Characteristics © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, lo = 1mA
. . . - 33 40 Vss = 4.5V, ID = 4.2A ©
Rosmn) Static Drain-to-Source On-Resistance mn
- 22 27 Vss =10v, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 1.3 1.7 2.3 V Vos = Ves, ID = 25pA
loss Drain-to-Source Leakage Current - - 1 pA I/os =24V, I/ss = 0V
- - 150 Vrrs = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
Re Internal Gate Resistance - 2.3 - Q
gts Forward Transconductance 9.5 - - S l/rss = 10V, ID = 5.2A
09 Total Gate Charge - 2.6 - lo = 5.2A
Qgs Gate-to-Source Charge - 0.8 - nC Vos =15V
di Gate-to-Drain ("Miller") Charge - 1.1 - VGS = 4.5V ©
tum) Turn-On Delay Time ._- 5.2 -- VDD =15V©
t, Rise Time - 4.4 - lo = 1.0A
tom Turn-Off Delay Time - 7.4 - ns Re = 6.89
t, Fall Time - 4.4 - VGS = 4.5V
Ciss Input Capacitance -- 382 -- Vss = 0V
Coss Output Capacitance - 84 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 39 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 1 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current -- -- 21 integral reverse s
(Body Diode) C) p-n junction diode.
Vso Diode Forward Voltage - - 1.0 v TJ = 25°C, Is = 1.6A, Vss = OV ©
tn Reverse Recovery Time - 11 17 ns T, = 25°C, VR = 15V, V=1.6A
er Reverse Recovery Charge - 4.0 6.0 nC di/dt = 100A/ps ©
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