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IRLL3303-IRLL3303TR
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD- 91379C
RLL3303
HEXFET® Power MOSFET
International
TOR Rectifier
Surface Mount
Dynamic dv/dt Rating
Logic-Level Gate Drive
Fast Switching
Ease of Paralleling
Advanced Process Technology
o Ultra Low On-Resistance s
Description
Fifth Generation HEXFETs from International RectITer
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
VDSS = 30V
RDS(on) = 0.031n
ID = 4.6A
The SOT-223 package is designed for surface-mount
using vaporphase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OWis possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max.
SOT-223
lo @ TA = 25''C
Continuous Drain Current, VGS @ 10V**
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V*
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current (O
Po @TA = 25°C
Power Dissipation (PCB Mount)"
Po @TA = 25°C
Power Dissipation (PCB Mount)'
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy©
Avalanche CurrentCD
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©
Tu, TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)'
Junction-to-Ant. (PCB Mount, steady state)"
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, tor comparison with other SMD devices.
1/22/99
IRLL3303 International
To.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.034 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.031 Q VGS = 10V, lo = 4.6A ©
- - 0.045 VGs = 4.5V, ID = 2.3A (9
VGS(th) Gate Threshold Voltage 1.0 - - V Vros = VGs, ID = 250pA
gfs Forward Transconductance 5.5 - - S Vos = 10V, ID = 2.3A
. - - 25 Vos = 30V, VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - 250 PA Vros = 24V, VGS = OV, T J = 125°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -16V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 16V
09 Total Gate Charge - 34 50 lo = 4.6A
Qgs Gate-to-Source Charge - 4.4 6.5 no Vros = 24V
di Gate-to-Drain ("Miller") Charge - IO 16 VGS = 10V, See Fig. 6 and 9 G)
td(on) Turn-On Delay Time - 7.2 - VDD = 15V
tr Rise Time - 22 - ns ID = 4.6A
td(off) Turn-Off Delay Time - 33 - Rs = 6.29
tr Fall Time - 28 - Ro = 3.29, See Fig. 10 ©
Ciss Input Capacitance - 840 - VGS = 0V
Cogs Output Capacitance - 340 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 0 91 MOSFET symbol D
(Body Diode) ' A showing the
ISM Pulsed Source Current 37 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 4.6A, VGS = 0V ©
trr Reverse Recovery Time - 65 98 ns To = 25°C, IF = 4.6A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps (ii)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Specification changes
Rev. # Parameters Old spec. New spec. Comments Revision Date
1 Vgsah) (Max.) 2.5V No spec. Removed VGS(th) (Max). Specification 11/1/96
1 VGS (Max.) 120 116 Decrease VGs (Max). Specification 11/1/96
Notes:
co Repetitive rating; pulse width limited by © ISD g 4.6A, di/dt g 110A/ps, VDD g V(BR)DSS:
max. junction temperature. (See Rr 11 ) TJ I 150°C
© VDD = 15V, starting To = 25°C, L = 13mH © Pulse width S 300ps; duty cycle S 2%.
Rs = 259. IAS-- 4.6A. (See Figure 12)
2
