IRLL2705TRPBF ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
IRLL3303 ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD- 91379CIRLL3303®HEXFET Power MOSFETl Surface MountDl Dynamic dv/dt RatingV = 30VDSSl Logic-Level ..
IRLL3303TR ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL3303TR ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD- 91379CIRLL3303®HEXFET Power MOSFETl Surface MountDl Dynamic dv/dt RatingV = 30VDSSl Logic-Level ..
IRLL3303TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
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IRLL2705TRPBF
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
ISERReCHHer
Surface Mount
Dynamic dv/dt Rating
Logic-Level Gate Drive
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
PD- 95338
|RL_2705PbF
HEXFET® Power MOSFET
D VDSS = 55V
A RDS(on) = 0.049
ID = 3.8A
Its unique package design allows for easy automatic pick- SOT-223
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OW is possible in a typical surface mount application
Absolute Maximum Ratings
Parameter Max. Units
ID til TA = 25°C Continuous Drain Current, Vss tt 10V** 5.2
ID @ TA = 25''C Continuous Drain Current, VGS tt 10V* 3.8 A
ID @ TA = 70°C Continuous Drain Current, VGS tt 10V* 3.0
IDM Pulsed Drain Current (D 30
PD @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25''C Power Dissipation (PCB Mount)' 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/''C
N/cs Gate-to-Source Voltage l 16 V
EAS Single Pulse Avalanche Energy© 110 mJ
IAR Avalanche Current© 3.8 A
EAR Repetitive Avalanche EnergyOD 0.10 mJ
dv/dt Peak Diode Recovery dv/dt © 7.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-An" (PCB Mount, steady state)* 93 120 o C NV
ROUA Junction-to-Amr. (PCB Mount, steady state)" 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
05/28/04
|RLL2705PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.061 - 1//''C Reference to 25''C, ID = 1mA
- - 0.040 Vss = 10V, ID = 3.8A (9
Ros(on) Static Drain-to-Source On-Resistance - - 0.051 g VCs = 5.0V, ko = 3.8A ©
- - 0.065 VGs = 4.0V, ID = 1.9A ©
VGsm Gate Threshold Voltage 1 .0 - 2.0 V Vos = VGS, In = 250pA
gfs Forward Transconductance 5.1 - - S Vos = 25V, ID = 1.9A
loss Drain-to-Source Leakage Current :: : 22550 PA x3: =" :2: x2: =" g, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
% Total Gate Charge - 32 48 ID = 3.8A
Qgs Gate-to-Source Charge - 3.5 5.3 nC I/ns = 44V
di Gate-to-Drain ("Miller") Charge - 9.7 14 V65 = 10V, See Fig. 6 and 9 (D
td(on) Turn-On Delay Time - 6.2 - Voc, = 28V
t, Rise Time - 12 - ns ID = 3.8A
td(ott) Turn-Off Delay Time - 35 - Rs = 6.29
tf Fall Time 22 Rn = 7.19, See Fig. 10 ©
Ciss Input Capacitance - 870 - Ves = 0V
Cass Output Capacitance 220 pF VDS = 25V
Crss Reverse Transfer Capacitance - 92 l - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 0.91 MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 30 p-n junction diode. s
Vsn Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 3.8A, VGs = 0V (9
trr Reverse Recovery Time - 58 88 ns TJ = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge - 140 210 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Voc, = 25V, starting To = 25°C. L = 15mH
Rs = 259, IAS-- 3.8A. (See Figure 12)
© ISDS 3.8A, di/dt S 220/Ups, VDD S V(BR)DSS:
T J 3 150°C
(9 Pulse width S 300psi duty cycle S 2%.
