IRLL2705TR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD- 91380BIRLL2705®HEXFET Power MOSFETl Surface MountDl Dynamic dv/dt RatingV = 55VDSSl Logic-Level ..
IRLL2705TR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL2705TRPBF ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
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IRLL3303TR ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL3303TR ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD- 91379CIRLL3303®HEXFET Power MOSFETl Surface MountDl Dynamic dv/dt RatingV = 30VDSSl Logic-Level ..
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IRLL2705-IRLL2705TR
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
ISERReCHHer
Surface Mount
Dynamic dv/dt Rating
Logic-Level Gate Drive
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra Low On-Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely etMient
and reliabledevice foruse in awidevariety ofapplications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, orwave soldering techniques.
PD- 91380B
RLL2705
HEXFET© Power MOSFET
D VDSS = 55V
A RDS(on) = 0.049
ID = 3.8A
Its unique package design allows for easy automatic pick- S o T -2 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .0W is possible in a typical surface mount application
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V** 5.2
In @ TA = 25°C Continuous Drain Current, Vss @ 10V* 3.8 A
In @ TA = 70°C Continuous Drain Current, Vss @ 10V* 3.0
IDM Pulsed Drain Current OD 30
Pro @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
l/ss Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 110 mJ
IAR Avalanche Current(0 3.8 A
EAR Repetitive Avalanche EnergyC) 0.10 mJ
dv/dt Peak Diode Recovery dv/dt © 7.5 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)' 93 120 o C AN
ReJA Junction-to-Amb. (PCB Mount, steady state)" 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
1/22/99
IRLL2705
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 55 - - V I/cs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient _-..- 0.061 - VI°C Reference to 25°C, ID = 1mA
- - 0.040 VGS = 10V, ID = 3.8A (9
Rrsom Static Drain-to-Source On-Resistance - - 0.051 Q VGS = 5.0V, ID = 3.8A ©
- - 0.065 Vss = 4.0V, ID = 1.9A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = VGs, ID = 250PA
9ts Forward Transconductance 5.1 - - S I/ns = 25V, ID = 1.9A
loss Drain-to-Source Leakage Current _- _- Ji, PA x: I 2% V2: =" tf, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
Qg Total Gate Charge - 32 48 ID = 3.8A
Qgs Gate-to-Source Charge - 3.5 5.3 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 9.7 14 VCs = 10V, See Fig. 6 and 9 ©
tdon) Turn-On Delay Time - 6.2 - VDD = 28V
tr Rise Time - 12 - ns ID = 3.8A
td(off) Turn-Off Delay Time - 35 - Rs = 6.29
tf Fall Time 22 RD = 7.19, See Fig. 10 ©
Ciss Input Capacitance - 870 - VGS = 0V
COSS Output Capacitance 220 pF Vos = 25V
Crss Reverse Transfer Capacitance - 92 l - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 0.91 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 30 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25''C, Is = 3.8A, VGS = 0V ©
trr Reverse Recovery Time - 58 88 ns To = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge - 140 210 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 15mH
Rs = 25f2, IAS = 3.8A. (See Figure 12)
© ISD s 3.8A, di/dt s 220A/ps, vDD s V(BR)Dss.
T J E 150°C
© Pulse width S 300ps; duty cycle 3 2%.
