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IRLL110-IRLL110TR
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
Tart, Rectifier
HEXFET6 Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on)Specihed at VGS= 4V & 5V
Fast Switching
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed forsurtace-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows foreasy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
PD - 90869A
|RLL11O
VDSS = 100V
RDS(on) = 0.54n
ID=1.5A
an enlarged tab for heatsinking. Power dissipation of S O T Al 2 3
grreaterthan 1.25Wis possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 5.0 V 1.5
ID @ Tc = 100°C Continuous Drain Current, VGS @ 5.0 V 0.93
IDM Pulsed Drain Current co 12 A
Pro @Tc = 25°C Power Dissipation 3.1
Po @TA = 25°C Power Dissipation (PCB Mount)" 2..0 W
Linear Derating Factor 0025
Linear Derating Factor (PCB Mount)" 0.017 wrc
VGs Gate-to-Source Voltage -/+10 V
EAS Single Pulse Avalanche Energy© 50 mJ
IAR Avalanche Current© 1.5 A
EAR Repetitive Avalanche Energy© 0.31 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 'C
Soldewring Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-PCB - 40 a C NV
ReJA Junction-to-Ambient. (PCB Mount)" - 60
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1/27/99
|RLL11O
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
Avamss/ATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25''C,h, = 1mA
Roam) StaticDrain-to-SourceOn-Resistanoe - - 0.54 VGS = 5.0V, ID = 0.90A ©
- - 0.76 n VGs = 4.0V, ID = 0.75A -
VGs(m) Gate Threshold Voltage 1.0 - 2.0 V Vos = Vss, ID = 250pA
gts Forward Transconductance 0.57 - - S VDs = 25V, ID = 0.90 A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 10V
Gate-to-Source Reverse Leakage - - -100 VGs = -10V
% Total Gate Charge - - 6.1 ID = 5.6A
Cas Gate-to-Source Charge - - 2.6 nC I/rss = 80V
di Gate-to-Drain ("Miller") Charge - - 3.3 VGS = 5.0V, See Fig. 6 and 13 ©
tdmn) Turn-On Delay Time - 9.3 - VDD = 50V
tr Rise Time - 47 - ns lo = 5.6A
tam) Turn-Off Delay Time - 16 - Rs = 12 Q
tf Fall Time - 18 - RD = 8.4 n,
LD Internal Drain Inductance - 4.0 - Between lead, 6mm(0.25in) D
nH from package and center 6&3
Ls Internal Source Inductance - 6.0 - ofdie contact. “S
Ciss Input Capacitance - 250 - VGs = 0V
Coss OutputCapacitance - 80 - pF VDS = 25V
Crss Reverse TransferCapacitance - 15 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.5 A showing the
ISM Pulsed Source Current 12 integral reverse G
(Body Diode) C) - - p-njunction diode. s
N/sn Diode Forward Voltage - - 2.5 V To = 25°C, ls = 1.5A, VGS = 0V ©
trr Reverse Recovery Time - 110 130 ns To = 25°C, IF = 5.6A
er Reverse RecoveryCharge - 0.50 0.65 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsictum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD=25V, starting To = 25°C, L = 25 mH
Re: 259, lAs = 1.5A. (See Figure 12)
© ISD $5.6A, di/dt S 75A/ps, VDD S V(BR)DSSV
T J s: 150°C
© Pulse width s: 300ps; duty cycle s: 2%.
