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IRLL024ZPBF
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD - 95990A
llRLL024ZPbF
HEXFET© Power MOSFET
International
TOR Rectifier
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching ' "
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
VDSS = 55V
RDS(on) = 60mf2
ID = 5.0A
Description
This H EXFETO Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combineto makethis design an extremely efficient
and reliable device for use in a wide variety of
applications.
SOT-223
Absolute Maximum Ratings
Parameter Max.
ID © TA = 25°C
Continuous Drain Current, Vss © 10V (Silicon Limited) it
ID © TA = 70°C
Continuous Drain Current, I/ss @ 10V ©
Pulsed Drain Current CO
PD @TA = 25°C
Power Dissipation ©
PD ©T, = 25°C
Power Dissipation
Linear Derating Factor C)
Gate-to-Source Voltage
EAs (Thermally limited)
Single Pulse Avalanche Energy©
E AS (Tested )
Single Pulse Avalanche Energy Tested Value ©
Avalanche Current OD
Repetitive Avalanche Energy s
See Fig.12a, 12b, 15, 16
Operating Junction and
Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Typ. Max.
Junction-to-Ambient (PCB mount, steady state) co
Junction-to-Ambient (PCB mount, steady state)
09/ 27/ 1 0
24ZPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.049 - V/°C Reference to 25°C, ID = 1mA
- 48 60 l/ss = 10v, ID = 3.0A ©
Roam) Static Drain-to-Source On-Resistance - - 80 mil l/ss = 5.0V, ID = 3.0A ©
- - 100 l/ss = 4.5V, ID = 3.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
gfs Forward Transconductance 7.5 - - S Vos = 25V, ID = 3.0A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, Vss = OV, T J = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
A Total Gate Charge - 7.0 11 ID = 3.0A
As Gate-to-Source Charge - 1.5 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 4.0 - Vss = 5.0V ©
tton) Turn-On Delay Time - 8.6 - Vor, = 28V
t, Rise Time - 33 - ns b = 3.0A
tom Turn-Off Delay Time - 20 - Rs = 56 Q
t, Fall Time - 15 - Vss = 5.0V ©
Ciss Input Capacitance - 380 - Vss = 0V
Coss Output Capacitance - 66 - Vos = 25V
Crss Reverse Transfer Capacitance - 36 - pF f = 1.0MHz
Coss Output Capacitance - 220 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 53 - Vss = OV, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 93 - Vss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 5.0 MOSFET symbol Lf
(Body Diode) A showing the
ISM Pulsed Source Current - - 40 integral reverse
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V T J = 25°C, IS = 3.0A, l/ss = 0V ©
trr Reverse Recovery Time - 15 23 ns T J = 25°C, IF = 3.0A, Vor, = 28V
Q,, Reverse Recovery Charge - 9.1 14 nC di/dt = 100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junctio
n temperature. (See fig. 11).
© Limited by TJmax, starting TJ = 25°C, L = 4.8mH
Rs = 259, IAS = 3.0A, Vss =10V.
Part not reco
mmended for use above this value.
© Pulse width S 1.0ms; duty cycle S 2%.
© Cass eff. is a
charging time as COSS while Vos is rising from 0 to 80% V935.
http://www.da
fixed capacitance that gives the same
tasheetcataloa.Com/
SLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
©This value determined from sample failure population.
100% tested to this value in production.
®When mounted on 1 inch square copper board.
©When mounted on FR-4 board using minimum
recommended footprint.
