IRLL024Z ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.SOT-223Absolute Maximum RatingsParameter Max. Units(Silicon Limited)
IRLL024Z
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
araRlectifier
AUTOMOTIVE MOSFET
PD - 95886A
IRLL024Z
HEXFET© Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C OperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
RDS(on) = 60mQ
ID = 5.0A
Description
Specifically designed forAutomotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely Iowon-resistance persilicon area. Additional
features ofthis design are a150°Cjunction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) I 5.0
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V © 4.0 A
IDM Pulsed Drain Current CD 40
PD @TA = 25°C Power Dissipation © 2.8
PD @TA = 25°C Power Dissipation 1.0 W
Linear Derating Factor C) 0.02 W/°C
I/ss Gate-to-Source Voltage t 16 V
EASiThermawvmited) Single Pulse Avalanche Energy© 21 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 38
IAR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
Tu Operating Junction and -55 to + 150
TSTS Storage Temperature Range I
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient (PCB mount, steady state) © -- 45 °C/W
ROJA Junction-to-Ambient (PCB mount, steady state) - 120
1
08/03/04
IRLL024Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BFi)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.049 - V/°C Reference to 25°C, ID = 1mA
-- 48 60 Vss =10V, ID = 3.0A ©
RDS(on) Static Drain-to-Source On-Resistance - -- 80 m9 Vos = 5.0V, ID = 3.0A oo
- - 100 Vss=4.5V, |D=3.OA ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250PA
gfs Forward Transconductance 7.5 - - S Vos = 25V, ID = 3.0A
loss Drain-to-Source Leakage Current - - 20 pA VDs = 55V, Vss = 0V
- - 250 VDS = 55V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 16V
Gate-to-Source Reverse Leakage - - -200 Vas = -16V
Ch Total Gate Charge - 7.0 11 ID = 3.0A
Qgs Gate-to-Source Charge - 1.5 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge -- 4.0 -- Ves = 5.0V OD
tum) Turn-On Delay Time -- 8.6 -- VDD = 28V
t, Rise Time ._- 33 -- ns ID = 3.0A
tom Turn-Off Delay Time - 20 - Rs = 56 Q
tr Fall Time - 15 - Vss = 5.0V ©
Ciss Input Capacitance - 380 - Vss = 0V
Cass Output Capacitance - 66 - VDS = 25V
Crss Reverse Transfer Capacitance - 36 - pF f = 1.0MH2
Coss Output Capacitance - 220 - l/ss = 0V, Vas = 1.0V, f = 1.0MHz
Coss Output Capacitance - 53 - l/ss = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 93 - l/ss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 5.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- - 40 integral reverse G
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 3.0A, VGS = 0V ©
tr, Reverse Recovery Time - 15 23 ns To = 25°C, IF = 3.OA, VDD = 28V
Qrr Reverse Recovery Charge - 9.1 14 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
© Limited by TJmax, starting To = 25°C, L = 4.8mH
max. junction temperature. (See fig. 11).
Re = 259, IAS = 3.0A, Vas =10V.
Part not recommended for use above this value.
© Pulse width f 1.0ms; duty cycle 3 2%.
© Coss eff. is a fixed capacitance that gives the same
charging time as c, while Vos is rising from O to 80% Voss.
SLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
©This value determined from sample failure population.
100% tested to this value in production.
®When mounted on 1 inch square copper board.
.When mounted on FR-4 board using minimum
recommended footprint.
