IRLL024NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL024Z ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.SOT-223Absolute Maximum RatingsParameter Max. Units(Silicon Limited)
IRLL024NTRPBF
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD - 95221
International
TOR Rectifier IRLL024NPbF
HEXFET® Power MOSFET
Surface Mount
Advanced Process Technology D
Ultra Low On-Resistance VDSS = 55V
Dynamic dv/dt Rating
Fast Switching . " RDS(on) = 00659
Fully Avalanche Rated G
Lead-Free ID = 3.1A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vaporphase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick- s O T -2 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V** 4.4
In @ TA = 25°C Continuous Drain Current, Vss @ 10V* 3.1 A
In @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.5
IDM Pulsed Drain Current C) 12
Pro @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy© 120 m]
IAR Avalanche CurrentC) 3.1 A
EAR Repetitive Avalanche EnergyO' 0.1 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to/mb. (PCB Mount, steady state)' 90 120 O C AN
ReJA Junction-to-Amb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
04/27/04
IRLL024NPbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.048 - V/°C Reference to 25°C, ID = 1mA
- - 0.065 VGS =10V, ID = 3.1A ©
RDs(on) Static Drain-to-Source On-Resistance _ - 0.080 g VCs = 5.0V, ID = 2.5A ©
- - 0.100 VGS = 4.0V, ID = 1.6A (ii)
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = I/ss, ID = 250pA
gfs Forward Transconductance 3.3 - - S Vros = 25V, ID = 1.9 A
loss Drain-to-Source Leakage Current : : Ji, pA V3: =" ig', :1: , g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - 10.4 15.6 ID = 1.9A
Qgs Gate-to-Source Charge - 1.5 2.3 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 5.5 8.3 VGs = 5.0V, See Fig. 6 and 9 CO
tdwn) Turn-On Delay Time - 7.4 - VDD = 28V
tr Rise Time - 21 - ns ID = 1.9A
td(0ff) Turn-Off Delay Time - 18 - Rs = 24 Q
tf Fall Time - 25 - RD = 15 Q, See Fig. 10 co
Ciss Input Capacitance - 510 - Vss = 0V
Cass Output Capacitance - 140 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 58 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 3.1 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 12 p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V To = 25°C, Is = 1.9A, VGS = 0V (ii)
tn Reverse Recovery Time - 39 58 ns To = 25°C, IF = 1.9A
G, Reverse RecoveryCharge - 63 94 nC di/dt = 100/Ups Ci)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 25 mH
Rs = 259,
IAS-- 3.1A. (See Figure 12)
© Iso S 1.9A, di/dt f 270/Ups, VDD S V(BR)DSS,
T J 3 150°C
© Pulse width S 300ps; duty cycle S 2%.
