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IRLL014N-IRLL014NTR
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD- 91499B
International
Tart, Rectifier IRLL014N
HEXFET® Power MOSFET
Surface Mount D
Advanced Process Technology VDSS = 55V
Ultra Low On-Resistance
Dynamic dv/dt Rating . A R = 0 149
Fast Switching G DS(on) .
Fully Avalanche Rated Iro = 2 0A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely emcient
and reliable device for use in a wide variety ofapplications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick- s O T -2 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OW is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.8
In @ TA = 25°C Continuous Drain Current, l/ss @ 10V* 2.0 A
In @ TA = 70''C Continuous Drain Current, VGS © 10V* 1.6
IDM Pulsed Drain Current co 16
Po @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Vss Gate-to-Source Voltage * 16 V
EAS Single Pulse Avalanche Energy© 32 mJ
IAR Avalanche Current0) 2.0 A
EAR Repetitive Avalanche Energy0D* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt © 7.2 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)' 90 120 o C AN
ReJA Junction-to-Amb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
1/25/99
IRLL014N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.015 - V/°C Reference to 25°C, ID = 1mA
- - 0.14 VGs=10V,lD=2.0A3)
Rosom Static Drain-to-Source On-Resistance - - 0.20 Q VGS = 5.OV, ID = 1.2A Cr)
- - 0.28 VGS = 4.0V, ID = 1.0A Cr)
VGSith) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGs, ID = 250pA
gfs Forward Transconductance 2.3 - - S Vos = 25V, ID = 1.0A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 I/rss = 44V, Veg = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -161/
% Total Gate Charge - 9.5 14 ID = 2.0A
Qgs Gate-to-Source Charge - 1.1 1.7 no Vos = 44V
di Gate-to-Drain ("Miller") Charge - 3.0 4.4 VGS = 10V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 5.1 - Vroro = 28V
tr Rise Time - 4.9 - ns ID = 2.0A
td(ott) Turn-Off Delay Time - 14 - Rs = 6.09
tt Fall Time - 2.9 - Ro = 149, See Fig. 10 ©
Ciss Input Capacitance - 230 - Ves = 0V
Coss Output Capacitance - 66 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 30 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) © - - 16 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V To = 25°C, Is = 2.0A, VGS = 0V G)
trr Reverse Recovery Time - 41 61 ns To = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 73 110 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 4.0mH
Rs = 259, IAS-- 4.0A. (See Figure 12)
TJs150°c
© ISD f 2.0A, di/dt S 170/Ups, VDD f V(BR)DSS,
co Pulse width I 300ps; duty cycle 5 2%.
