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IRLL014-IRLL014TR
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
ISER Rectifier
HEXFET© Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Logic-Level Gate Drive
RDs(on) Specified at VGS=4V & 5V
Fast Switching
Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package designallows foreasy automaticpick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
PD - 90866A
IRLL014
VDSS = 60V
RDS(on) = 0.20Q
ID = 2.7A
an enlarged tab for heatsinking. Power dissipation of SOT-223
grreaterthan 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 2.7
In @ Tc = 100°C Continuous Drain Current, I/ss @ 10 V 1.7
IDM Pulsed Drain Current OD 22 A
PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
I/ss Gate-to-Source Voltage -/+10 V
EAs Single Pulse Avalanche Energy© 100 mJ
IAR Avalanche CurrenK0 2.7 A
EAR Repetitive Avalanche Energy0) 0.31 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Soldewring Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-PCB - 40 o C NV
' Junction-to-Ambient. (PCB Mount)" - 60
** When mounted on 1" SQUARE pcb (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
2/1/99
|RLLO14
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage 60 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coeffcient - 0.073 - V/°C Reference to 25°C, ID = 1mA
Rosm StatjCDrain-to-SourceOn-Resistance - - 0.20 VGS = 5.0V, ID = 1.6A ©
- - 0.28 Q VGS = 4.0V, ID = 1.4A GD
VGs(th) Gate Threshold Voltage 1.0 - 2.0 V VDS = VGs, ID = 250pA
gfs Forward Transconductance 3.2 - - S VDS = 25V, ID = 1.6 A
loss Drain-to-Source Leakage Current - - 25 pA I/os = 60V, VGS = 0V
- - 250 VDs = 48V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 10V
Gate-to-Source Reverse Leakage - - -100 I/ss = -10V
th Total Gate Charge - - 8.4 ID = 10A
Qas Gate-to-Source Charge - - 3.5 no VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 6.0 VGs = 5.0V, See Fig. 6 and 13 (4)
td(on) Turn-On Delay Time - 9.3 - VDD = 30V
tr Rise Time - 110 - ns ID = 10A
td(off) Turn-Off Delay Time - 17 - Rs = 12 Q
tf Fall Time - 26 - RD = 2.8 f2, See Fig. 10 (9
LD Internal Drain Inductance - 4.0 - Between lead, 6mm(0.25in) irri,
nH from package and center SE)
Ls Internal Source Inductance - 6.0 - ofdie contact. "
Ciss Input Capacitance - 400 - VGS = 0V
Coss Output Capacitance - 170 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 42 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 2 7 MOSFET symbol D
(Body Diode) - - . A showing the C-,-,'-,
ISM Pulsed Source Current 22 integral reverse G l
(Body Diode) C) - - p-njunction diode. s
VSD Diode Forward Voltage - - 1.6 V TJ = 25°C, Is = 2.7A, VGs = 0V G)
trr Reverse Recovery Time - 65 130 ns Tu = 25°C, IF = 10A
er Reverse RecoveryCharge - 0.33 0.65 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsicturn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD=25V, starting Tu = 25°C, L =16 mH
RG = 259,
IAS = 2.7A. (See Figure 12)
TJS150°C
© ISD f 10A, di/dt f 90A/ps, VDD f V(BR)DSS,
GD Pulse width S 300ps; duty cycle 5 2%.
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