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IRLIZ34N
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR, Rectifier
PD - 9.1329B
IRLIZ34N
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS G)
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 0.035Q
s ID = 22A
TO-220 FULLPAK
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 22
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
IDM Pulsed Drain Current C)6) 110
PD @Tc = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 W/°C
VGs Gate-to-Source Voltage :16 V
EAS Single Pulse Avalanche Energy ©© 110 m]
IAR Avalanche CurrentO© 16 A
EAR Repetitive Avalanche Energy®© 3.7 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 4.1
RNA Junction-to-Ambient - - 65 ''CIW
8/25/97
IRLlZ34N International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 - V/°C Reference to 25°C, ID = 1mA©
- - 0.035 VGS =10V, ID = 12A GD
RDS(on) Static Drain-to-Source On-Resistance - - 0.046 f2 I/ss = 5.0V, ID = 12A CI)
- - 0.060 VGs = 4.0V, ID = 10A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250PA
gfs Forward Transconductance 11 - - S Vros = 25V, ID = 16A©
bss Drain-to-Source Leakage Current : : 22550 pA "ve,", el V: =" g, Tu = 150°C
I Gate-to-Source Forward Leakage - - 100 A I/ss = 16V
GSS Gate-to-Source Reverse Leakage - - -100 n VGS = -16V
Qg Total Gate Charge - - 25 ID = 16A
Qgs Gate-to-Source Charge - - 5.2 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 14 l/GS = 5.0V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 8.9 - VDD = 28V
tr Rise Time - 100 - ns ID = 16A
tam) Turn-Off Delay Time - 29 - Rs = 6.59, Vas = 5.0V
t, Fall Time 21 RD = 1.89, See Fig. 10 (ii)(D
LD Internal Drain Inductance - 4.5 - Between tal D
6mm (0.25m.)
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center ot di e contact S
Ciss Input Capacitance - 880 - VGs = 0V
Coss Output Capacitance - 220 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 94 - t = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 22 MOSFET symbol D
(Body Diode) A showmg the L-a-r
18M Pulsed Source Current - - 1 10 Integral reverse G (tl-]
(Body Diode) co© p-n junction diode. s
Vsp Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 12A, VGS = 0V ©
trr Reverse Recovery Time - 76 110 ns T, = 25°C, IF = 16A
Qrr Reverse RecoveryCharge - 190 290 nC di/dt = 100A/ps ©©
Notes:
C) Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle 5 2%.
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 610pH s t=60s, f=60Hz
Rs = 259, IAS = 16A. (See Figure 12)
© ISD 3 16A, di/dt s 270A/ps, VDD g V(BR)DSS, © Uses IRLZ34N data and test conditions
T J f 175°C
