IRLIZ34G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLIZ44G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.849
IRLIZ44G
Intetpatipytl
EOR Rectifier
HEXFET+ Power MOSFET
q Isolated Package
..
IRLIZ44N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLIZ44NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRLL014 ,60V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 90866AIRLL014®HEXFET Power MOSFETl Surface MountDl Available in Tape & ReelV = 60VDSSl Dynamic ..
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX240VA-7B388I , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016E-100LJN , In-System Programmable High Density PLD
IRLIZ34G
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.848
International
1:212 Rectifier IRLIZ34G
HEXFETO Power MOSFET
0 Isolated Package
'l High Voltage Isolation-- 2.5KVRMS 6) D V - 60V
0 Sink to Lead Creepage Dist.--- 4.8mm DSS -
0 Logic-Level Gate Drive
It RDs(on) Specified at 1/Gs=41/ & 5V G RDS(on) = th050n
0 Fast Switching
0 Ease of Paralleling s ID = 20A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. R2t
The TO-22O Fullpak eliminates the need for additional insulating hardware in 'igtiib
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica 'i1iiiile,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ 5.0 V 20
ID @ To = 100°C Continuous Drain Current, Vas @ 5.0 V 14 A
IDM Pulsed Drain Current Ci) 80
Pro @ Tc = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 WPC
Ves Gate-to-Source Voltage i10 V
EAS Single Pulse Avalanche Energy © 200 t mJ
dv/dt Peak Diode Recovery dv/dt O 4.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Fue Junction-to-Case - - 3.6 O C /W
ReJA Junction-to-Ambient - - 65
lRLIZ34G
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 60 - - V sz=ov, ID: 250pA
AV(ER)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0050 Q VGs=5.0V, |D=12A (d)
- - 0.070 VGs=4.0V, b=10A ©
Vasith) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 25th1A
cps Forward Transconductance 12 - - S Vos=25V, 10:12A (4)
loss Drain-to-Source Leakage Current - - 25 WA Vos=60V, VGS=OV
- - 250 VDs=48V, Ves=0V, TJ=150°C
loss Gate-to-Source Forward Leakage - - 100 n A Ves=10V
Gate-to-Source Reverse Leakage - - -100 1/as=-10V
ch i Total Gate Charge - - 35 lo=30A
Qgs Gate-to-Source Charge - - 7.1 nC I/ross-NN
di i Gate-to-Drain ("Miller") Charge -.-. - 25 VGs=5.0V See Fig. 6 and 13 @
Hon) Turn-On Delay Time - 14 - VDD=30V
t, 3 Rise Time - 170 - ns b=30A
td(on) g Turn-Off Delay Time - 30 - Re=6.0Q
t, Fall Time - 56 - RD=1.OQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - it2(ri'J.stie.') D
nH from package o.i2si--_ )
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 1600 - VGs=0V
Coss Output Capacitance - 660 - pF Vos--.. 25V
Crss Reverse Transfer Capacitance - 170 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 20 MOSFET symbol _ D
(Body Diode) A showing the LT/rr:
ISM Pulsed Source Current -..... -. 80 integral reverse G m
(Body Diode) (IC) p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 v TJ=25°C, 15:20A, I/ss-HN © i,
tn Reverse Recovery Time - 90 180 ns TJ=25°C, IF=3OA i
Orr Reverse Recovery Charge - 0.65 1.3 PC dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=583uH
RG=25§2, lAs=20A (See Figure 12)
© ISDSSOA, di/de200A/ps, VDDSV(BR)DSS,
TJS175°C
G) t=60s, f=60HZ
(ii) Pulse width f, 300 us; duty cycle 32%.
