IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
IRLIZ24N. ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
IRLIZ34G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLIZ44G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.849
IRLIZ44G
Intetpatipytl
EOR Rectifier
HEXFET+ Power MOSFET
q Isolated Package
..
IRLIZ44N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX240VA-7B388I , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016E-100LJN , In-System Programmable High Density PLD
IRLIZ24N-IRLIZ24N.
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International PD-9.1344A
ISZR Rectifier PRELIMINARY IRLlZ24N
HEXFET® Power MOSFET
o Logic-Level Gate Drive
0 Advanced Process Technology D
q Isolated Package VDSS = 55V
o High Voltage Isolation = 2.5KVRMS (S)
o Sink to Lead Creepage Dist. = 4.8mm G Rcmon) = 0.069
o Fully Avalanche Rated
ID = 14A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FU LLPAK
http://www.loq.com/
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGs @ 10V 14
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 9.9 A
IDM Pulsed Drain Current (MG) 72
Pry @Tc = 25°C Power Dissipation 26 W
Linear Derating Factor 0.17 W/°C
VGs Gate-to-Source Voltage :16 V
EAs Single Pulse Avalanche Energy (3(6) 68 mJ
IAR Avalanche CurrentC)© 11 A
EAR Repetitive Avalanche Current(D© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (3)(e) 4.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Roos Junction-to-Case - - 5.8
RQJA Junction-to-Ambient - - 65 °CNV
5/9/97
I RLIZ24N International
TOR lactifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.061 - V/°C Reference to 25°C, ID = 1mA©
- - 0.060 Vas =10V, ID = 8.4A (io
Roam) Static Drain-to-Source On-Resistance - - 0.075 n VGS = 5.0V, ID = 8.4A (io
- - 0.105 Veg = 4.0V, ID = 7.0A C9
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = Was, ID = 250PA
gtg Forward Transconductance 8.3 - - S VDs = 25V, ID = 11A©
. - - 25 A VDS = 55V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 p VDs = 4 4V, Vss = 0V, Tu = 1 50°C
Gate-to-Source Forward Leakage - - 100 VGs = 16V
less Gate-to-Source Reverse Leakage - - -100 nA Ves = -16V
Qg Total Gate Charge - - 15 ID = 11A
Clgs Gate-to-Source Charge - - 3.7 no VDs = 44V
Clad Gate-to-Drain ("Miller") Charge - - 8.5 Was = 5.0V, See Fig. 6 and 13 @©
td(on) Turn-On Delay Time - 7.1 - VDD = 28V
tr Rise Time - 74 - ns lo-- 11A
td(ott) Turn-Off Delay Time - 20 - Re = 129, VGS = 5.0V
tr Fall Time 29 RD = 2.49, See Fig. 10 (ii)Ch)
. Between lead, D
LD Internal Drain Inductance - 4.5 - H 6mm (0.25in.) b
n from package GQ )
Ls Internal Source Inductance - 7.5 - . 's----
and center of die contact 9
Ciss Input Capacitance - 480 - VGS = 0V
Cogs Output Capacitance - 130 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 14 MOSFET symbol "" D
(Body Diode) A snowmg the Q _ >
ISM Pulsed Source Current . - - 72 integral reverse G
(Body Diode) COG) p-n Junction diode. s
V3.) Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 8.4A, VGs = 0V @
trr Reverse Recovery Time - 60 90 ns Tu = 25°C, IF = 11A
er Reverse RecoveryCharge - 130 200 no di/dt = 100A/ps (ii)(D
Notes:
C) Repetitive rating; pulse width limited by © Pulse width S 30005; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 790pH G) t=60s, f=60Hz
Re: 259, IAS-- 11A. (See Figure 12)
© ISO 5 11A, di/dt :290A/ps, VDD g V(BR)DSS, © Uses IRLZ24N data and test conditions
Tu I 175°C
http://www.loq.com/
