IRLIZ14G ,Single N-Channel HEXFET Power MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
IRLIZ24N. ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
IRLIZ34G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
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IRLIZ14G
Single N-Channel HEXFET Power MOSFET
Intettatii9t,tal
I421 Rectifier
HEXFET® Power MOSFET
PD-9.846
IRLIZ14G
0 Isolated Package
0 High Voltage Isolation-- 2.5KVRMS (5) D
0 Sink to Lead Creepage Dist.= 4.8mm
0 Logic-Level Gate Drive
0 RDs(on) Specified at VGs=4V & 5V ‘ r,
0 Fast Switching
o Ease of Paralleling
VDSS '2 60V
s Iro=8.0A
RDS(on) = 0.209
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
Io © Tc = 25°C Continuous Drain Current, Ves © 5.0 V 8.0
Io © Tc = 100°C Continuous Drain Current, Ves @ 5.0 V 5.7 A
IDM Pulsed Drain Current co 32
Po @ To = 25°C Power Dissipation 27 W
k Linear Derating Factor 0.18 W/DC
1(ss Gate-to-Source Voltage :10 V
EAS Single Pulse Avalanche Energy C) 68 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
--- - Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Unit:
Rm Junction-to-Case - - 5.5
. . °C/W
Rm Junction-to-Ambient - - 65 ----
IRLiZ1 4G
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 -_ - V Veszov, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.20 Q Vas--50V, ID=4.BA ©
- - 0.28 VGS=4.0V, b=4.OA ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos=VGs, ID: 250pA
gis Forward Transconductance 3.6 - - S Vos=25V, Io=4.8A (E)
loss Drain-to-Source Leakage Current - - 25 WA Vrosr--60V, Vas=OV
- - 250 Vos=48V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=1OV
Gate-to-Source Reverse Leakage - - 3 -100 VGs=-10V
q, Total Gate Charge - - 8.4 |D=10A
Qgs Gate-ta-Source Charge - - 3.5 " 1hos=48V
di Gate-to-Drain ("Miller") Charge - - 6.0 VGs=5.0V See Fig. 6 and 13 @
td(on) _ Tum-On Delay Time - 9.3 -- Vpo=30V
tr Rise Time - 110 - ns |D=10A
td(om Turn-Off Delay Time - 17 _ RG=12Q
l, Fall Time - 26 - Ro=2.8f2 See Figure 10 @
Lo Internal Drain Inductance - 4.5 - tt2t"alti1nd.r) D
nH from package GEE
Ls Internal Source Inductance - 7.5 - Ind center of
die contact 5
Ciss Input Capacitance - 400 - Vss--..OV
Cass Output Capacitance - 170 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 42 - . f=1.0MHz See Figure 5
C Drain to Sink Capacitance --.. 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. V Typ, Max. Units Test Conditions
Is Continuous Source Current - - 8 0 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 32 integral reverse G
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=2SOC, Is=8.0A, VGS=0V co
trr Reverse Recovery Time - 65 130 ns TJ=25°C, IF=1OA
er Reverse Recovery Charge - 0.33 0.65 0C di/dt=100A/ps GD
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=1.2mH
R62259, lAs=8.OA (See Figure 12)
© Isos1OA, di/dts90A/ws, 1/DDfV(BR)Dss,
TJS175°C
© t=60s, f=60Hz
© Pulse width 3 300 ps; duty cycle 32%.
