IRLIB9343PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
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The moulding compound used provides a high isolation
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IRLIB9343PBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package
International
ISBR Rectifier
Features
q Advanced Process Technology
q Key Parameters Optimized for Class-D Audio
Amplifier Applications
. Low RDSON for Improved Efficiency
. Low ck; and Qsw for Better THD and Improved
Efficiency
. Low Qrr for Better THD and Lower EMI
. 175°C Operating Junction Temperature for
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability
. Lead-Free
Description
PD - 95745
DIGITAL AUDIO MOSFET
lRLll39343PbF
Key Parameters
V03 -55 v
RDS(ON) typ. @ I/ss = -10V 93 m9
RDS(ON) typ. @ I/ss = -4.5V 150 m9
q, typ. 31 nC
T: max 175 °C
v .___i
S TO-220 Full-Pak
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage -55 V
VGS Gate-to-Source Voltage 120
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 A
lr, @ To = 100°C Continuous Drain Current, VGS @ -10V -10
G, Pulsed Drain Current C) -60
PD @Tc = 25°C Power Dissipation 33 W
PD @Tc = 100°C Power Dissipation 20
Linear Derating Factor 0.26 W/°C
Tu Operating Junction and -40 to + 175 ''C
TSTG Storage Temperature Range
Mounting Torque, 6-32 or M3 screw 10 (1.1) |bf°in (N-m)
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case © - 3.84 °C/W
RBJA Junction-to-Ambient © _ 65
Notes (D through © are on page 7
1
IRLll39343PbF International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - -52 - mV/°C Reference to 25°C, lo = -1mA
RDSM Static Drain-to-Source On-Resistance - 93 105 m9 I/ss = -10V, ID = -3.4A (3)
- 150 170 l/ss = -4.5V, ID = -2.7A Cl)
Veson) Gate Threshold Voltage -1.0 - - V VDs = I/ss, ID = -250pA
AVGS([h)/ATJ Gate Threshold Voltage Coefficient - -3.7 - mV/°C
IDSS Drain-to-Source Leakage Current - - -2.0 pA VDS = -55V, I/ss = 0V
- - -25 I/rs = -55v, l/GS = ov, T, = 125°C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
gfs Forward Transconductance 5.3 - - S Vos = -25V, ID = -14A
q, Total Gate Charge - 31 47 Vros = -44V
Qgs Pre-Vth Gate-to-Source Charge - 7.1 - VGS = -10V
di Gate-to-Drain Charge - 8.5 - Ir, = -14A
ngd, Gate Charge Overdrive - 15 - See Fig. 6 and 19
td(on) Turn-On Delay Time - 9.5 - VDD = -28V, I/ss = -10V (3
t, Rise Time - 24 - ID = -14A
td(0ff) Turn-Off Delay Time - 21 - ns RG = 2.59
Fall Time - 9.5 -
Ciss Input Capacitance - 660 - VGS = 0V
Coss Output Capacitance - 160 - pF VDS = -50V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 280 - VGS = 0V, Vos = 0V to -44V
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center ofdie contact
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 mJ
[AR Avalanche Current CO See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy S m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - - -14 MOSFET symbol D
(Body Diode) A showing the H"
ISM Pulsed Source Current - - -60 integral reverse G mg“
(Body Diode) C) p-n junction diode. S
Va, Diode Forward Voltage - - -1.2 v TJ = 25°C, ls = -14A, vGS = 0v Cl)
1,, Reverse Recovery Time - 57 86 ns T: = 25°C, IF = -14A
Qrr Reverse Recovery Charge - 120 180 nC di/dt = 100Alps Cl)
2
