IRLIB4343PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB9343 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB9343PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIZ14G ,Single N-Channel HEXFET Power MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
ISPGDX160VA-3B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX240VA-7B388I , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
IRLIB4343PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package
International
ISBR Rectifier
Features
. Advanced Process Technology
0 Key Parameters Optimized for CIass-D Audio
AmplifierApplications
q Low RDSON for Improved Efficiency
. Low Q9 and st for Better THD and Improved
Efficiency
. Low Qlrr for Better THD and Lower EMI
. 175°C Operating Junction Temperature for
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability
. Lead-Free
Description
DIGITAL AUDIO MOSFET
PD - 95755
IRLIB4343PbF
Key Parameters
V03 55 V
RDS(ON) typ. @ l/ss = 10V 42 m9
RDS(ON) typ. @ VGS = 4.51/ 57 m9
09 typ. 28 nC
T, max 175 °C
s TO-220 Full-Pak
This Digital Audio HEXFETO is specifically designed for Class-D audio amplifer applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key CIass-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for CIass-D audio amplifer
applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 55 V
VGS Gate-to-Source Voltage :20
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 19 A
lr, @ TC = 100°C Continuous Drain Current, N/ss @ 10V 13
G, Pulsed Drain Current co 80
PD @Tc = 25°C Power Dissipation 39 W
PD @Tc = 100°C Power Dissipation 20
Linear Derating Factor 0.26 W/°C
TJ Operating Junction and -40 to + 175 ''C
TSTG Storage Temperature Range
Mounting torque, 6-32 or M3 screw 10llyin (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case co - 3.84 "C/W
RedA Junction-to-Ambient GD - 65
Notes co through co are on page 7
1
8/24/04
IRLll34343PbF International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BI/oss Drain-to-Source Breakdown Voltage 55 - - V I/ss = OV, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 42 50 mo VGs = 10V, lo = 4.7A ©
- 57 65 I/ss = 4.5V, ID = 3.8A ©
Vesuh) Gate Threshold Voltage 1.0 - - V Vos = VGS, ID = 250PA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient - -4.4 - mV/°C
loss Drain-to-Source Leakage Current - - 2.0 pA Vos = 55V, VGs = 0V
- - 25 Vos = 55V, I/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 8.8 - - S VDS = 25V, ID = 19A
Q, Total Gate Charge - 28 42 Vos = 44V
Qgs Pre-Vth Gate-to-Source Charge - 3.5 - I/ss = 10V
di Gate-to-Drain Charge - 9.5 - ID = 19A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
ton) Turn-On Delay Time - 5.7 - VDD = 28V, Ves = 10V ©
t, Rise Time - 19 - ID = 19A
lon Turn-Off Delay Time - 23 - ns Rs = 2.59
t, Fall Time - 5.3 -
Ciss Input Capacitance - 740 - I/ss = 0V
Cass Output Capacitance - 150 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 59 - f = 1.0MHz, See Fig.5
Cass Effective Output Capacitance - 250 - Ves = 0V, Vos = 0V to -441/
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) /"Crf l
Ls Internal Source Inductance - 7.5 - from package GAL/ /
and center ofdie contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 130 mJ
|AR Avalanche Current s See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy s mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 19 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) OD p-n junction diode. S
Va, Diode Forward Voltage - - 1.2 V Tu = 25°C, ls = 19A, I/ss = 0V (3)
t,, Reverse Recovery Time - 52 78 ns Tu = 2S'C, IF = 19A
Q,, Reverse Recovery Charge - 100 150 nC di/dt = 1OOA/ps co
2
