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IRLIB4343
55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package
International
TOR Rectifier
Features
Advanced Process Technology
Key Parameters Optimized for CIass-D Audio
AmplifierApplications
Low RDSON for Improved Efficiency
Low Q9 and st for Better THD and Improved
Efficiency
Low er for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Description
This Digital Audio HEXFETO is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
DIGITAL AUDIO MOSFET
PD - 95857A
IRLll34343
Key Parameters
V03 55 v
RDS(ON) typ. @ l/ss = 10V 42 m9
RDS(ON) typ. @ I/ss = 4.5V 57 m9
Qg typ. 28 nC
T J max 175 °C
s TO-220 Full-Pak
Parameter Max. Units
VDS Drain-to-Source Voltage 55 V
VGS Gate-to-Source Voltage t20
lo @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 A
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 13
G, Pulsed Drain Current OD 80
PD @TC = 25°C Power Dissipation 39 W
PD @Tc = 100°C Power Dissipation 20
Linear Derating Factor 0.26 W/°C
TJ Operating Junction and -40 to + 175 ''C
Tsm Storage Temperature Range
Mounting torque, 6-32 or M3 screw 10ltpin (1.1N.m)
Thermal Resistance
Parameter Typ. Max. Units
R9J0 Junction-to-Case co - 3.84 "C/W
RQJA Junction-to-Ambient © - 65
Notes co through S are on page 7
1
3/31/04
IRLll34343 International
122R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250PA
ABN/ross/ATU Breakdown Voltage Temp. Coefficient - 15 - mV/°C Reference to 25°C, ID = 1mA
Roach) Static Drain-to-Source On-Resistance - 42 50 mo VGS = 10V, ID = 4.7A ©
- 57 65 V68 = 4.5V, ID = 3.8A (3)
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGS, ID = 250pA
AVGSGMIATJ Gate Threshold Voltage Coefficient - -4.4 - mV/°C
loss Drain-to-Source Leakage Current - - 2.0 pA Vos = 55V, VGs = 0V
- - 25 VDS = 55V, Vss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 8.8 - - S VDS = 25V, ID = 19A
Qg Total Gate Charge - 28 42 Vos = 44V
Qgs Pre-Vth Gate-to-Source Charge - 3.5 - VGS = 10V
di Gate-to-Drain Charge - 9.5 - ID = 19A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
tam”) Turn-On Delay Time - 5.7 - I/or, = 28V, l/ss = 10V ©
t, Rise Time - 19 - ID = 19A
tum) Turn-Off Delay Time - 23 - ns Rs = 2.59
t, Fall Time - 5.3 -
Ciss Input Capacitance - 740 - I/ss = 0V
Cass Output Capacitance - 150 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 59 - f = 1.0MHz, See Fig.5
Cass Effective Output Capacitance - 250 - I/cs = 0V, Vos = 0V to -44V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) (r_r1ir,
Ls Internal Source Inductance - 7.5 - from package GALFLL
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche Current s See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy co mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 19 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) OD p-n junction diode. S
Va, Diode Forward Voltage - - 1.2 v Tu = 25°C. ls = 19A, Vss = 0V ©
trr Reverse Recovery Time - 52 78 ns Tu = 25°C, IF = 19A
Q,, Reverse Recovery Charge - 100 150 nC di/dt = 100Alps ©
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