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IRLI620G
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1235
IRLI620G
IrttetttatiiEtal
IOR Rectifier
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation = 2.5KVRMSC9 L)
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V "
Fast Switching
Ease of paralleling
VDSS = 200V
RDS(on) = 0.809
ID=4.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 5.0V 4.0
ID @ Tc = 100°C Continuous Drain Current, VGS @ 5.0V 2.6 A
IDM Pulsed Drain Current CD 16
PD @Tc = 25''C Power Dissipation 30 W
Linear Derating Factor 0.24 W/''C
VGs Gate-to-Source Voltage t10 V
EAS Single Pulse Avalanche Energy © 62 mJ
IAR Avalanche Current0D 4.0 A
EAR Repetitive Avalanche Energy (D 3.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsuc Junction-to-Case - - 4.1 0
Ram Junction-to-Ambient - - 65 CAN
Revision 0
IRLI620G
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
RDSON) Static Drain-tty-Source On-Resistance - - 0.80 n VGS = 5.0V, ID = 2.4A (4C)
- - 1.0 VGS = 4.0V, ID = 2.0A ®
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V VDs = VGs, ID = 250pA
9ts Forward Transconductance 1.2 - - S Vros = 50V, ID = 3.1A
loss Drain-to-Source Leakage Current - - 25 pA I/os = 200V, l/ss = 0V
- - 250 Vros = 160V, Was = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 10V
Gate-to-Source Reverse Leakage - - -100 VGS = -10V
Qg Total Gate Charge - - 16 ID = 5.2A
Qgs Gate-to-Source Charge - - 2.7 nC I/rss = 160V
di Gate-to-Drain ("Miller") Charge - - 9.6 I/ss = 10V, See Fig. 6 and 13 G)
tam) Turn-On Delay Time - 4.2 - ns VDD = 100V
tr Rise Time - 31 - ID = 5.2A
td(off) Turn-Off Delay Time - 18 - Rs = 9.09
tr Fall Time - 17 - R9 = 20n, See Fig. 10 ©
. Between lead, 0
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) (2
Ls Intemal Source Inductance -- 7.5 - 2231;31:53: die contact i)
Ciss Input Capacitance - 360 - VGs = 0V
Coss Output Capacitance - 91 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 27 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol 7,.-.“
(Body Diode) - - 4.0 showing the A (rd'),
I Pulsed Source Current A inte ral reverse SH "1 J
SM g ", " ,3
(Body Diode) OD - - 16 p-n junction diode. "i-rr).','
Vso Diode Forward Voltage - - 1.8 V To = 25''C, ls = 4.0A, VGs = 0V (9
trr Reverse Recovery Time - 180 270 ns To = 25°C, IF = 5.2A
Qrr Reverse RecoveryCharge - 1.1 1.7 pC di/dt = 100/Vps (4)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting T: = 25°C, L = 5.8mH
Rs = 259, IAS = 4.0A. (See Figure 12)
(3 Isro 5 5.2A, di/dt S 95/Ups, Voc, S V(BR)DSSV
TJs 150°C
S t=60s, f=60Hz
© Pulse width s: 300ps; duty cycle 3 2%.
