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IRLI540N
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1497A
IRLl540N
International
TOR Rectifier
PRELIMINARY
HEXFET© Power MOSFET
o Logic-Level Gate Drive D
0 Advanced Process Technology VDSS = 100V
. Isolated Package
o High Voltage Isolation = 2.5KVRMS Cr) H- RDS(on) = 0.044n
c Sink to Lead Creepage Dist. = 4.8mm G I
0 Fully Avalanche Rated I ID = 23A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a Iowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
TO-220 FULLPAK
fixing.
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGs @ 10V 23
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 16 A
IDM Pulsed Drain Current C)(E) 120
PD @Tc = 25°C Power Dissipation 54 W
Linear Derating Factor 0.36 W/°C
VGS Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy©© 310 mJ
IAR Avalanche CurrentC0© 18 A
EAR Repetitive Avalanche Energy(0 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (96) 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.8 0
RNA Junction-to-Ambient - 65 CM,
3/16/98
IRL.l540N
International
IDR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA©
- - 0.044 VGS =10V,ID = 12A ©
RDSWD Static Drain-to-Source On-Resistance - _ 0.053 Q VGs = 5.0V, k, = 12A ©
- - 0.063 VGS = 4.0V, ID = 10A 60
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250pA
gfs Forward Transconductance 14 - - S l/ns = 25V, ID = 18A©
. - - 25 Vros = 100V, VGs = 0V
loss Drain-to-Source Leakage Current - _ 250 pA Vros = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
ch Total Gate Charge - - 74 ID = 18A
Qgs Gate-to-Source Charge - - 9.4 nC N/ns = 80V
di Gate-to-Drain ("Miller") Charge - - 38 VGS = 5.0V, See Fig. 6 and 13 Cots)
tum...) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 81 - ns ID = 18A
tam) Turn-Off Delay Time - 39 - Rs = 5.09, VGS = 5.0V
tf Fall Time - 62 - RD = 2.79, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1800 - VGs = 0V
Cass Output Capacitance - 350 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) 0M9 - - 120 p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 18A, VGS = 0V ©
trr Reverse Recovery Time - 190 290 ns T: = 25°C, IF = 18A
G, Reverse RecoveryCharge - 1.1 1.7 pC di/dt = 100/Ups Ci)0)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting T: = 25°C, L = 1.9mH
Re: 259, IAS = 18A. (See Figure 12)
© Iso I 18A, di/dt f 180A/ps, VDDS V(BR)DSS!
TJ s: 175°C
GD Pulse width S 300ps; duty cycle S 2%.
CO t=60s, f=60Hz
© Uses IRL540N data and test conditions
