IRLI540G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelnternatiqnal
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IRLI540G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.845
international]
1:212 Rectifier llRLl540G
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation--- 2.5KVRMS © D V - 100V
Sink to Lead Creepage Dist.--- 4.8mm DSS -
Logic-Level Gate Drive
RDs(on)Specified at Ves=4V & 5V
0 Fast Switching
0 Ease of Paralleling
RDS(on) = 0.0779
S |D=17A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciai-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 5.0 V 17
lo © Tc = 100°C Continuous Drain Current, VGS @ 5.0 V 12 A
10M Pulsed Drain Current C) 68
Pry @ Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 WPC
VGs Gate-to-Source Voltage i10 V
EAS Single Pulse Avalanche Energy © 400 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T: Operating Junction and -55 to +175
Tsrs Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m)
Thermal Resistance
_ Parameter Min. Typ. Max. i Units
ch Junction-to-Case - - 3.1
. . °C/W
Rm Junction-to-Ambient - - 65
IRLI54OG
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(gmoss Drain-to-Source Breakdown Voltage 100 - - V veszov, ID: 250pA -
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 -... VPC Reference to 25°C, ID: 1mA _
RDS(on) Static Drain-to-Source On-Resistance - - (1077 n VGs=5.OV, ID=1OA ©
- - 0,11 Vss=4.0V, |D=8.5A C)
VGS(1h) Gate Threshold Voltage 1.0 - 2.0 V VDS=VGs, ID: 250pA
gis Forward Transconductance 12 - - S Vos=25V, Io=10A ©
bss Drain-to-Source Leakage Current - - 25 11A Vix--1001/, VGS=0V
- - 250 VDs=80V, VGs=0V, Tr--1500C
less Gate-to-Source Forward Leakage - - i 100 n A VGs=10V -
Gate-to-Source Reverse Leakage - - -100 VGs=-10V -
th Total Gate Charge .--. - 64 10:28A
Qgs Gate-to-Source Charge - - 9.4 no VDs=80V
di Gate-to-Drain ("Miller") Charge - - 27 Vss=5.0V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 8.5 - VDD=50V
tr Rise Time - 170 - ns lro=28A
tum") Tu rn-Off Delay Time - 35 - Re=4.5§2
t: Fall Time -- 80 - RD=1.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - [eit,vriJ.iti1nd.') ii,
nH from package egg)
Ls Internal Source Inductance - 7.5 - Ind center of ,
die contact s
Ciss Input Capacitance - 2200 - I/ar-col/
Coss Output Capacitance - 560 - pF V05: 25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the 'ra,)
ISM Pulsed Source Current - - 68 integral reverse G tr)
(Body Diode) (i) p-n junction diode. s
Vsp Diode Forward Voltage - - 2.5 V TJ=2500, ls=17A, Vss=OV C4D
tn Reverse Recovery Time - 130 260 ns TJ=25°C, IF=28A
er Reverse Recovery Charge - 1.5 2.9 “C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=2.1mH
RG--250, IAs=17A (See Figure 12)
© Ist28A, di/dts170A/us, VDDSV(BR)DSS,
TJS175°C
s t=60s, f=60Hz
© Pulse width f 300 us; duty cycle 32%.
