IRLI530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
IRLI540G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelnternatiqnal
TOR Rectifier
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation- ..
IRLI540N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
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IRLI630G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI640 ,Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)applications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
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IRLI530N
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1350B
International IRLI530N
TOR Recti fi er PRELIMINARY
HEXFET® Power MOSFET
o Logic-Level Gate Drive D
. Advanced Process Technology VDSS = 100V
0 Isolated Package l-'
o High Voltage Isolation = 2.5KVRMS (S) H- ar RDS on = 0109
o Sink to Lead Creepage Dist. = 4.8mm G I ( )
o Fully Avalanche Rated I -
Description s ID - 12A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
vxe'LCr,.arL-l
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a lowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
TO-220 FULLPAK
fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 12
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 8.6 A
IDM Pulsed Drain Current C)6) 60
Po @Tc = 25°C Power Dissipation 41 W
Linear Derating Factor 0.27 W/°C
VGS Gate-to-Source Voltage , 16 V
EAS Single Pulse Avalanche Energy©© 150 mJ
IAR Avalanche CurrentC0© 9.0 A
EAR Repetitive Avalanche Energy© 4.1 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.7 Q
ROJA Junction-to-Ambient - 65 C/W
3/16/98
IRLl530N
International
TOR iiectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.122 - V/''C Reference to 25°C, ID = 1mA©
- - 0.100 VGS = 10V, ID = 9.0A ©
RDs(on) Static Drain-to-Source On-Resistance - _ 0.120 Q VGs = 5.0V, '0 = 9.0A ©
- - 0.150 Vss = 4.0V, ID = 8.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250pA
gfs Forward Transconductance 7.7 - - S Vros = 50V, ID = 9.0A©
. - - 25 Vros = 100V, VGs = 0V
loss Drain-to-Source Leakage Current - - 250 HA Vros = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 N/ss = -16V
Qg Total Gate Charge - - 34 ID = 9.0A
Qgs Gate-to-Source Charge - - 4.8 n0 Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 2O VGS = 5.0V, See Fig. 6 and 13 ©©
tum.) Turn-On Delay Time - 7.2 - VDD = 50V
tr Rise Time - 53 - ns ID = 9.0A
td(off) Turn-Off Delay Time - 30 - Rs = 6.09. VGs = 5.0V
tr Fall Time - 26 - RD = 5.59, See Fig. 10 coco
. Between lead,
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package .
and center of die contact
Ciss Input Capacitance - 800 - VGs = 0V
Coss Output Capacitance - 160 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 90 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 12 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co© - - 60 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 6.6A, VGs = 0V ©
trr Reverse Recovery Time - 140 210 ns To = 25°C, IF = 9.0A
Qrr Reverse RecoveryCharge - 740 1100 nC di/dt = 100A/ps (4DO)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
C) Starting Tu = 25°C, L = 3.1mH
RG = 259, MS = 9.0A. (See Figure 12)
© Iso I 9.0A, di/dt S 540A/ps, VDD f V(BR)DSSI
T J f 175°C
© Pulse width S 300ps; duty cycle S 2%.
s t=60s, f=60Hz
© Uses IRL530N data and test conditions
