IRLI530GPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.844
International
EOR Rectifier lRLl530G
HEXFETOD Power MOSFET
0 Isolated Package
..
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IRLI530G-IRLI530GPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international]
TOR Rectifier
HEXFETOD Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage isolation: 2.5KVRMS (5)
tt Sink to Lead Creepage Dist.-- 4.8mm
Logic-Level Gate Drive
0 Ros(on)Specified at 1/Gs=41/ & 5V
Fast Switching
0 Ease of Paralleling
PD-9.844
IRL|53OG
VDSS = 100V
RDS(on) = 0.16Q
S ID = 9.7A
on-resistance and cost-effectiveness.
The TO-220 Fuilpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
'i1isiii)s.,
TO-220 FULLPAK
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, I/ss @ 5.0 V 9.7
ID a To = 10tPC Continuous Drain Current, Ves @ 5.0 V 6.9 A
IDM Pulsed Drain Current co 39 _
Po @ To = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 WPC
VGs Gate-to-Source Voltage i10 ', V
EAs Single Pulse Avalanche Energy © 250 ml
IAR Avalanche Current (I) 9.7 A
EAR Repetitive Avalanche Energy co 4.2 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
)-'' Mounting Torque, 6-32 or MS screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC J.unt1ion-.to-ai't - - 3.6 °C/W
Junction-to-Ambient - - 65
IRLI53OG
Electrical Characteristics tii! TJ = 25°C (unless otherwise specified)
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=4.0mH
Rtr--25n, |As=9.7A (See Figure 12)
© ISDS15A, di/dts140A/us, VDDSV(BR)Dss.
TJS1 75°C
Parameter Min. Typ. Max. Units Test Conditions
V(Bn)oss Drain-to-Source Breakdown Voltage 100 - - V I/tss-HN, lo: 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.14 - V/°C Reference to 25°C, ID: 1mA___
Roam) Static Drain-to-Source On-Resistance - - 0.16 Q VGS=5'OV’ |D=5'8A ©
- -.. 0.22 Vss=4.0V, b--4.9A G)
I/tasm Gate Threshold Voltage 1 l) - 2.0 V VDs=VGs, ID: 250pA
gfs Forward Transconductance 6.1 - - S Vos=25V, lrr=5.8A co
. loss Drain-to-Source Leakage Current - - 25 “A VDs--100V, Vss=0V
- - 250 Vos=80V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=10V
Gate-to-Source Reverse Leakage - - -100 Ves=-10V
09 Total Gate Charge - - 28 lrr--15A
Qgs Gate-to-Source Charge - - 3.8 no VDs=8OV
di Gate-to-Drain ("Miller") Charge - - 14 Ves=5.0V See Fig. 6 and 13 C9
tum) Turn-On Delay Time - 4.7 - VDD=50V
tr Rise Time - 100 - ns ID=15A
tam) Turn-Off Delay Time - 22 - RG=6.0§2
tf Fall Time - 48 - Rn=32f2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - g $121262- Jie. ') D
nH from package GE )
Ls Internal Source Inductance -...... 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 930 - Vatr--0V
Coss Output Capacitance - 250 - pF V05: 25V
Crss Reverse Transfer Capacitance - 57 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 9 7 MOSFET symbol D
(Body Diode) . A showing the *7:
ISM Pulsed Source Current - - 39 integral reverse G :3.
(Body Diode) co p-n junction diode, s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, |s=9.7A, Ves=0V co
tn Reverse Recovery Time - 100 200 ns TJ=25°C, IF=15A
Qrr Reverse Recovery Charge - 0.70 1.4 “C di/dt=100A/ys 69
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© t=60s, f=60Hz
© Pulse width s: 300 ps; duty cycle 32%.
