IRLI520NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI530G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI530GPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.844
International
EOR Rectifier lRLl530G
HEXFETOD Power MOSFET
0 Isolated Package
..
IRLI530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
IRLI540G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelnternatiqnal
TOR Rectifier
HEXFET® Power MOSFET
Isolated Package
High Voltage Isolation- ..
IRLI540N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
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IRLI520N-IRLI520NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1496A
IRLI520N
International
TOR Rectifier
PRELIMINARY
HEXFET® Power MOSFET
o Logic-Level Gate Drive D
0 Advanced Process Technology VDSS = 100V
0 Isolated Package
0 High Voltage Isolation = 2.5KVRMS s " RDSW) = 0139
o Sink to Lead Creepage Dist. = 4.8mm G
o Fully /).valanche Rated ko =8.1 A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of r .:i't't2.,Ti-k,-
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 8.1
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 5.7 A
IDM Pulsed Drain Current C)6) 35
Po @Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage , 16 V
EAS Single Pulse Avalanche Energy©© 85 mJ
IAR Avalanche CurrentC0© 6.0 A
EAR Repetitive Avalanche Energy© 3.0 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 5.0 ''C/W
ROJA Junction-to-Ambient - 65
3/16/98
IRLl520N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.11 - V/''C Reference to 25°C, ID = 1mA©
- - 0.18 VGS =10V,ID = 6.0A ©
RDs(on) Static Drain-to-Source On-Resistance - _ 0.22 Q VGs = 5.0V, '0 = 6.0A ©
- - 0.26 Vss = 4.0V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250pA
gfs Forward Transconductance 3.1 - - S Vros = 25V, ID = 6.0A©
. - - 25 Vros = 100V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 HA Vros = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 N/ss = -16V
Qg Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 n0 Vros = 80V
di Gate-to-Drain ("Miller") Charge - - IO VGS = 5.0V, See Fig. 6 and 13 ©©
tum.) Turn-On Delay Time - 40 - VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
td(off) Turn-Off Delay Time - 23 - Rs = 119. VGs = 5.0V
tr Fall Time 22 RD = 8.29, See Fig. 10 coco
. Between lead,
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package .
and center of die contact
Ciss Input Capacitance - 440 - Ves = 0V
Coss Output Capacitance - 97 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 8 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co© - - 35 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 6.0A, VGs = 0V ©
trr Reverse Recovery Time - 110 160 ns To = 25°C, IF = 6.0A
Qrr Reverse Recovery Charge - 410 620 nC di/dt = 100A/ps (4DO)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
C) Starting Tu = 25°C, L = 4.7mH
RG = 259, MS = 6.0A. (See Figure 12)
© Iso s 6.0A, di/dt s 340A/ps, V00 f V(BR)D33,
T J f 175°C
© Pulse width S 300ps; duty cycle S 2%.
s t=60s, f=60Hz
© Uses IRL520N data and test conditions
