IRLI520G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1496AIRLI520NPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Tech ..
IRLI520NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI530G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI530GPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.844
International
EOR Rectifier lRLl530G
HEXFETOD Power MOSFET
0 Isolated Package
..
IRLI530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
ISPGDX160A-5Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160A-7Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160V-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160V-7Q208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-3B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
IRLI520G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.843
IRLI520G
llrtterrtatiDrtall
199R Rectifier
HEXFET® Power MOSFET
Isolated Package
o High Voltage Isolation-- 2.5KVRMS (5) D VDSS = 100V
0 Sink to Lead Creepage Dist.= 4.8mm
0 Logic-Level Gate Drive
0 RDs(on)Specified at VGS=4V & 5V G RDS(on) = 0.279
0 Fast Switching
o Ease' of Paralleling
S lD = 7.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in 'igtiib'
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 5.0 V 7.2
In @ Ts = 100°C Continuous Drain Current, l/ss @ 5.0 V 5.1 A
IDM Pulsed Drain Current OD 29
PD @ Tc = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 WPC
Vas Gate-to-Source Voltage i10 V
EAs I Single Pulse Avalanche Energy Q) 170 mJ
IAR iAvaianche Current CO 7.2 A
EAR ! Repetitive Avalanche Energy co 3.7 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction and -55 to +175
Tsre Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 4.1 o C AN
Rm Junction-to-Ambient - - 65
IRLl520G
Electrical Characteristics tit TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Ves=OV, ID: 250WA
AV(BR)D'SS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - _ Od Q Vss=5.0V, Iro=4.3A ©
- - 0.38 Ves=4.0V, |o=3.8A ©
Vesun) Gate Threshold Voltage 1.0 - 2.0 V VDs=Vss, ID: 25OWA
gfs Foxward Transconductance 3.3 - - S Vos=50V, ID=4.3A GD -
loss Drain-to-Source Leakage Current - - 25 11A VDs=100V, l/ss-HN
- - 250 VDs=80V, VGs=0V, TJ=150°C
ksss Gate-to-Source Forward Leakage - - 100 n A VGs=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
09 Total Gate Charge - - 12 lo=9.2A
Qgs Gate-to-Source Charge - -.- 3.0 nC Vos=80V
di Gate-to-Drain ("Miller0 Charge - - 7.1 VGs=5.OV See Fig. 6 and 13 co
tum Turn-On Delay Time - 9.8 - VDD=50V
tr Rise Time - 64 - ns 10:9.2A
td(orf) Turn-Off Delay Time - 21 - Re=9.0§2
h Fall Time - 27 - RD=5.2£2 See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - tii3tv,vrTo1.ltiei.') D
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of
die contact s
Ciss Input Capacitance --. 490 - Var=OV
Goss Output Capacitance - 150 - PF V95: 25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min 1 Typ. Max. Units Test Conditions
ls Continuous Source Current I - - 7 2 MOSFET symbol D
(Body Diode) i, ' A showing the Ci)
ISM Pulsed Source Current ( - _ 29 integral reverse G :1.
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 2.5 V Ti=25oC, ls=7.2A, Vss--0V co
tr, Reverse Recovery Time - 130 190 ns TJ=25°C, IF=9.2A
Ch, Reverse Recovery Charge - 0.83 1.0 wt di/dt=100A/us ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=4.9mH
Re=25§2, IAS--7.2A (See Figure 12)
© [5039.2A, di/dts110A/us, VDDSV(BR)DSS,
TJ5175°C
© t=60s, f=60Hz
© Pulse width f 300 ps; duty cycle C2%.
