IRLI520 ,Power MOSFETapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI520G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1496AIRLI520NPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Tech ..
IRLI520NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI530G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI530GPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.844
International
EOR Rectifier lRLl530G
HEXFETOD Power MOSFET
0 Isolated Package
..
ISPGDX160A-5Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160A-7Q208 , In-System Programmable Generic Digital CrosspointTM
ISPGDX160V-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160V-7Q208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-3B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
IRLI520
Power MOSFET
PD - 9.1496A
IRLI520N
HEXFET® Power MOSFET
International
TOR Rectifier
PRELIMINARY
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm G
Fully Avalanche Rated
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
are well known for, providesthedesignerwith an extremely
ethcient and reliable device for use in a wide variety of .
Fe''.:',.;,,,...
D VDSS = 100V
A RDS(on) = 0.189
ID =8.1A
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ 10V 8.1
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 5.7 A
IDM Pulsed Drain Current coco 35
Po @Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.20 W/“C
VGS Gate-to-Source Voltage l 16 V
EAs Single Pulse Avalanche Energy©© 85 mJ
IAR Avalanche CurrentC0© 6.0 A
EAR Repetitive Avalanche Energy© 3.0 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 5.0 o
ReJA Junction-to-Ambient - 65 CAN
3/16/98
IRLl520N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA©
- - 0.18 Vss = 10V, ID = 6.0A CO
RDS(on) Static Drain-to-Source On-Resistance _ - 0.22 Q l/GS = 5.OV, ID = 6.0A ©
- - 0.26 VGS = 4.0V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGS, ID = 250PA
git FonNard Transconductance 3.1 - - S VDS = 25V, ID = 6.0A©
. - - 25 VDS = 100V, VGS = OV
Koss Drain-to-Source Leakage Current - _ 250 pA Vos = 80V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 20 lo = 6.0A
Qgs Gate-to-Source Charge - - 4.6 nC Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 10 VGS = 5.0V, See Fig. 6 and 13 ©©
Won) Turn-On Delay Time - 4O - VDD = 50V
tr Rise Time -- 35 - ns ID = 6.0A
taom Turn-Off Delay Time - 23 - Rs = 119, VGs = 5.0V
tr Fall Time 22 RD = 8.29, See Fig. 10 ©©
. Between lead, 2 D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) (f3.
Ls Internal Source Inductance - 7.5 - 22:12::32: die contact 'NC E/
Ciss Input Capacitance - 440 - VGs = 0V
Coss Output Capacitance - 97 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 8 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (OOD - - 35 p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 6.0A, Vss = 0V ©
trr Reverse Recovery Time - 110 160 ns TJ = 25°C, IF = 6.0A
Qrr Reverse Recovery Charge - 410 620 nC di/dt = 100A/ps ©©
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See ng. 11 )
© Starting To = 25°C, L = 4.7mH
Rs = 259, lAs = 6.0A. (See Figure 12)
© Iso S 6.0A, di/dt f 340/Ups, VDD f V(BR)DSS,
T J s: 175°C
co Pulse width f 300ps; duty cycle 3 2%.
co t=60s, f=60Hz
© Uses IRL520N data and test conditions
