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IRLI3803PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD- 95642
IRL 3803PbF
XFET® Power MOSFET
International
TOR Rectifier
Logic-Level Gate Drive
Advanced Process Technology D
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS CS)
Sink to Lead Creepage Dist. = 4.8mm G
Fully Avalanche Rated
Lead-Free s
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device designthat HEXFET Power MOSFETs
are well known tor, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
Vross = 30V
Roswn) = 0.006n
ID = 76A
The TO-220 Fullpak eliminates the need for additional T0220 FULLPAK
insulating hardware incommerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalentto using
a 100 micron mica barrier with standard TOC20 product.
The Fullpak is mounted to a heatsink using a single clipor
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. this
b C) To = 25°C Continuous Drain Current, Veg C) 5.0V 76
b (il To = 100°C Continuous Drain Current, Ves (i) 5.0V 54 A
IDM Pulsed Drain Current OXO 470
Po (tTc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 we
Vas Gate-ttAloe Voltage :16 V
EAs Single Pulse Avalanche Energy 2)CO 610 m,)
IAR Avalanche Curreni®© 71 A
EAR Repetitive Avalanche Current® 6.3 m,)
dv/dt Peak Diode Recovery dv/dt ()Mi) 5.0 V/ns
f: Operating Junction and -55 to + 175
TSTG Storage Temperature Range T i
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, (r32 or M3 screw. 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rex: ,jrmditm-to-Case - - 2.4 a
Ru; Junction-toAmbient - - 65 CM,
1
7/26/04
IRLl3803PbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 30 .-....- .-r--. V I/ss = iN, b = 250pA
AVngsgATJ Breakdown Voltage Temp. Coefficient - 0.052 - 1//'C Reference to 25°C. ID = 1mA©
RDS(on) Static Drain4tySthrce On-Resistance - - 0'006 Q Vos = lov, b = 40A (O
- - 0.009 Vos = 15V, b = 34A (O
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = Vos, b = 250PA
[ht Forward Transconductance 55 - - S Vos = 25V, ID = 71A(0
loss Drain-to-Source Leakage Current - - 25 PA Vos = 30V, l/ss = 0V
- - 250 Mx = 24V, Ves = OV, T: = 150''C
less Gate-toSource Forward Leakage - - 100 n A Ws = 16V
Gate-to-Source Reverse Leakage - - -100 l/ss = -16V
A Total Gate Charge - - 140 b = 71A
Qgs Gate-to-Source Charge - - 41 nC 1 Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 78 Vss = 4.5V, See Fig. 6 and 13 "
tam) Tum-On Delay Time - 14 - l/oo = 15V
t, Rise Tlme - 230 - ns l b = 71A
td(off) Turn-Off Delay Time - 29 - Rs = 1.32 l/ss = 4.5V
tf Fall Time - 35 - Rs = 0.209, See Fig. 10 ®©
k Internal Drain Inductance - 4.5 - Between Pl D
nH 1 6mm (0.25m) SE
LS Internal Source Inductance - 7.5 - _ from oackaue .
and center of die contact 5
Css Input Capacitance - 5000 - Veg = 0V
Coss Output Capacitance - 1800 - pF 1 Vos = 25V
Crss Reverse Transfer Capacitance - 880 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 76 MOSFET symbol C)
(Body Diode) A showmg the
ISM Pulsed Source Current 470 integral reverse G
(Body Diode) OMS) pm junction diode, s
I/so Diode Forward Voltage - - 1.3 V Tu = 25°C. Is = 40A, I/ss = 0V 0)
trr Reverse Recovery Time - 120 180 ns T J = 25°C. IF = 71A
Q,, Reverse RecoveryCharge - 450 680 nC di/dt = 100A/ps C4)(0
Notes:
C) Repet1tive rating: pulse width limited by Q Iso I 71 A, di/dt I 130A/ps. VDD g V(BR)DSS' co 1:605, f=60Hz
max. junction temperature. ( See fig. 11 ) TJg 175°C
© I/oo = 15V, starting Tu = 25°C. L =180pH C4) Pulse width f 300ps; duty cycle S 2%. Q Uses IRL3803 data and test conditions
Rs = 25n, IAS = TIA, (See Figure 12)
2
