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IRLI3803
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1320B
IRLI3803
HEXFET© Power MOSFET
International
193 Rectifier
o Logic-Level Gate Drive
0 Advanced Process Technology D VDSS = 30V
o Ultra Low On-Resistance
0 Isolated Package _ =
o High Voltage Isolation = 2.5KVRMS S G H- A RDS(on) 0.0060
o Sink to Lead Creepage Dist. = 4.8mm I - A
o Fully Avalanche Rated D - 76
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, rovidesthedesi nerwith an extremel , 'it'L''Ci-,TL2
efficient and rl2'il'd device for us: in a wide variety J,
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The mouldin com ound used rovides a hi h isolation
capability ang a love thermal resistance betwgen the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalentto using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 5.0V 76
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 5.0V 54 A
IDM Pulsed Drain Current C00D 470
Pro @Tc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 W/°C
Ves Gate-to-Source Voltage :16 V
EAs Single Pulse Avalanche Energy (MD 610 mJ
IAR Avalanche CurrentO© 71 A
EAR Repetitive Avalanche CurrentC) 6.3 mJ
dv/dt Peak Diode Recovery dv/dt (MD 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C l
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rout: Junction-to-Case - - 2.4 C)
Ram Junction-to-Ambient - - 65 CM,
8/25/97
IRLI3803 International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.006 Q VGS = 10V, ID = 40A (4)
- - 0.009 VGs = 4.5V, ID = 34A (9
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = Tss, ID = 250pA
9ts Forward Transconductance 55 - - S VDS = 25V, ID = 71A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 30V, VGS = 0V
- - 250 VDs = 24V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 140 ID = 71A
Qgs Gate-to-Source Charge - - 41 nC Ws = 24V
di Gate-to-Drain ("Miller") Charge - - 78 VGs = 4.5V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 14 - VDD = 15V
t, Rise Time - 230 - ns ID = 71A
td(off) Turn-Off Delay Time - 29 - Rs = 1.39, VGS = 4.5V
tf Fall Time - 35 - RD = 0.20n, See Fig. 10 @©
u, Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.) Q: )
LS Internal Source Inductance - 7.5 - from package .
and center of die contact s
Ciss Input Capacitance - 5000 - VGS = 0V
Coss Output Capacitance - 1800 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 880 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 76 MOSFET symbol D
(Body Diode) A showing the ar
ISM Pulsed Source Current 470 integral reverse G
(Body Diode) COO) p-n junction diode. s
N/so Diode Forward Voltage - - 1.3 V To = 25°C, Is = 40A, I/ss = 0V GD
trr Reverse Recovery Time - 120 180 ns TJ = 25°C, IF = 71A
er Reverse RecoveryCharge - 450 680 nC di/dt = 100Alps @©
Notes:
co Repetitive .ratin.g; pulse width limited by © 'SDS 71 A, di/dt g 130A/ps, VDD g 1/(BR)DSS, s t=60s, f=6OHz
max. junction temperature. ( See fig. 11 ) TJ g 175°C
© VDD = 15V, starting T J = 25°C, L = 180pH © Pulse width 3 300ps; duty cycles: 2%. © Uses IRL3803 data and test conditions
Rs = 259, IAS = 71A. (See Figure 12)
