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IRLI3705
HEXFET Power MOSFET
International
TOR Rectifier
PD - 9.1369B
IRLI3705N
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm
o Fully Avalanche Rated
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 0.019
Description s ID - 52A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of r "tCtCCiCi-R-
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a onv therrhail resietahce between the tab TO-220 FULLPAK
and external heatsink. This isolation IS equivalent to usmg
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 52
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 37 A
IDM Pulsed Drain Current COO) 310
PD @Tc = 25°C Power Dissipation 58 W
Linear Derating Factor 0.39 W/°C
Ves Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy©© 340 mJ
IAR Avalanche Current(0© 46 A
EAR Repetitive Avalanche EnergyCD 5.8 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.6 o
RNA Junction-to-Ambient - 65 C/W
8/25/97
IRLl3705N
International
TOR Rectifier
Electrical Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, ID = 1mA©
- - 0.010 VGs =10V,lro = 28A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.012 Q VGS = 5.0V, ID = 28A ©
- - 0.018 VGS = 4.0V, ID = 24A q)
Vesah) Gate Threshold Voltage 1.0 - 2.0 V VDS = VGs, ID = 250pA
gts Forward Transconductance 50 - - S Vos = 25V, ID = 46A©
. - - 25 VDS = 55V, VGS = 0V
bss Drain-to-Source Leakage Current - - 250 HA VDS = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 98 ID = 46A
Qgs Gate-to-Source Charge - - 19 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 49 N/ss = 5.0V, See Fig. 6 and 13 @©
iti(on) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 140 - ns ID = 46A
td(off) Turn-Off Delay Time - 37 - RG = 1.80., N/ss = 5.0V
tf Fall Time 78 RD = 0.599, See Fig. 10 coco
. Between lead, D
LD Internal Drain Inductance - 4.5 - 6mm (0.25in.) Q
nH from package G )
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3600 - I/ss = 0V
Cogs Output Capacitance - 870 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 56)
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 52 A showing the H7:
ISM Pulsed Source Current - - 310 integral reverse G (ru,
(Body Diode) COO p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 28A, VGs = OV ©
tn Reverse Recovery Time - 94 140 ns To = 25°C, IF = 46A
Qrr Reverse RecoveryCharge - 290 440 nC di/dt = 100A/ps C4)6)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 320pH
Rs = 259, IAS = 46A. (See Figure 12)
© ISD S 46A, di/dt S 250A/ps, VDD S V(BR)DSS,
T J 3 175°C
co Pulse width S 300ps; duty cycle S 2%.
s t=60s, f=60Hz
C6) Uses IRL3705N data and test conditions
