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IRLI3615
150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
Tart, Rectifier
PD - 94390
IRLl3615
HEXFET0 Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
VDSS = 150V
RDS(on) = 0.085 Q
lro--14AS
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and TO-220 FULLPAK
external heatsink. This isolation is equivalent to using a 100 micron mica barrier
with standard TO-220 product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V 14 s
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.8 A
IDM Pulsed Drain Current C) 56
Po @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
I/ss Gate-to-Source Voltage 116 V
EAS Single Pulse Avalanche Energy© 340 mJ
IAR Avalanche CurrentCD 8.4 A
EAR Repetitive Avalanche Energy© 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.3 ''C/W
ReJA Junction-to-Ambient - 65
1
01/30/02
|RL|3615
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage 150 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.18 - V/°C Reference to 25°C, ID = 1mA
Roswn) StaticDrain-to-SourceOn-Resistance - - O.085 VGS = 10V, ID = 8.4A ©
- - 0.095 Q Was = 5.0V, ID = 8.4A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGS, ID = 250PA
gts Forward Transconductance 14 - - S Ws = 50V, ID = 8.4A
loss Drain-to-Source LeakageCurrent _- _- Ji', pA xi; 123$ tt -] g, T, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 Was = -161/
Qg Total Gate Charge - - 140 lo = 8.4A
Qgs Gate-to-Source Charge - - 9.5 nC Ws = 120V
di Gate-to-Drain ("Miller") Charge - - 53 VGS = 10V, See Fig. 6 and 13 (4D
tdon) Turn-On Delay Time - 8.3 - VDD = 75V
tr Rise Time - 20 - ns ID = 8.4A
tum) Turn-Off Delay Time - 110 - Rs = 6.29, VGS = 10V
t, Fall Time - 53 - Ro = 8.99, See Fig. 10 G)
u, Internal Drain Inductance - 4.5 - H :2::§2:: D
Ls IntemaISouroelnductance -.-.- 7.5 - n from package . f )
and center of die contact G
Ciss Input Capacitance - 1600 - Was = 0V s
Coss Output Capacitance .- 290 .- pF Vos = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 146) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) _ - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 8.4A, I/ss = 0V (4D
trr Reverse Recovery Time - 180 270 ns To = 25°C, IF = 8.4A
Qrr Reverse RecoveryCharge - 1130 1700 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting T: = 25°C, L = 9.5mH
RG = 259, lAs = 8.4A. (See Figure 12)
© la, S 8.4A, di/dt S 510A/ps, VDD S V(BR)DSSI
TJ f 175°C.
(if) Pulse width f 300ps; duty cycle f 2%.
s Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
