IRLI3215 ,150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package Advanced Process TechnologyD Ultra Low On-ResistanceV = 1 ..
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IRLI3215
150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package
International
Tart, Rectifier
PD - 95043
|RL|3215PbF
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
Lead-Free s
VDSS = 150V
RDS(on) = 0.166 Q
ID =12AS
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalentto using a 100 micron mica barrier
with standard TO-220 product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
Absolute Maximum Ratings
'tiitiiiiiii.),ts
';si)i:i:iiii:e
TO-220 FULLFAK
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 12 s
ID @ TC = 100°C Continuous Drain Current, Ves @ 10V 8.5 A
IDM Pulsed Drain Current (D© 48
Po @Tc = 25°C Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
Vss Gate-to-Source Voltage tl6 V
EAS Single Pulse Avalanche Energy©© 130 mJ
bu, Avalanche Current0D© 7.2 A
EAR Repetitive Avalanche Energy© 8.0 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibfoin (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .9 o
ReJA Junction-to-Ambient - 65 CM,
1
IRLl3fy15PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BH)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.20 - V/°C Reference to 25°C, ID = 1mA ©
- - 0.166 VGs=10V, L=7.2A ©
Roam) StaticDrain-to-Source On-Resistance _ _ 0.184 Q Vss = 5.OV, ID = 7.2A 9)
- - 0.208 VGs = 4.0V, ID = 6A (9
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 8.3 - - S Vos = 25V, ID = 7.2A©
loss Drain-to-Source LeakageCurrent -_'- : Ji, pA VS: : :ng t: : g, Tu = 1 50°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 Vas = -16V
ch Total Gate Charge - - 35 ID = 7.2A
Qgs Gate-to-Source Charge - - 4.1 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - - 21 l/ss = 5.0V, See Fig. 6 and 13 (96)
td(on) Turn-On Delay Time - 7.4 __- VDD = 75V
tr Rise Time - 45 - ns ID = 7.2A
tum) Turn-Off Delay Time - 38 - Ra = 129, Vss = 5.0V
tf Fall Time 36 RD = 10.29, See Fig. 10 (MB
Lo Internal Drain Inductance - 4.5 - nH 23:73.25 il/r, D)
Ls IntemaISourcelnductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 775 - Vas = 0V
Coss OutputCapacitance - 140 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 12© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 48 p-n junction diode. s
VSD Diode Forward Voltage -- -- 1.3 V To = 25°C, Is = 7.2A, VGS = 0V 6)
trr Reverse Recovery Time __- 160 240 ns To = 25°C, IF = 7.2A
Qrr Reverse RecoveryCharge - 810 1210 nC di/dt = 1OOA/ps (96)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C2) Starting TJ = 25°C, L = 4.9mH
Rs = 259, IAS = 7.2A. (See Figure 12)
© ISD S 7.2A, di/dt S 100A/ps, VDD S V(BR)DSSa
TJs175°C
© Pulse width s: 300ps; duty cycle S 2%.
© Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
co Uses IRL3215 data and test conditions.
