IRLI2910PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier“mm mm»
. [ogIc-Level Gate Drive
Advanced Process Technology
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IRLI2910PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
:raRIectifier
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS (S)
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
Descri ption
Fifth Generation HEXFEI’s from International Rectifier utilize
adva nced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, com bined with
the tttstswitchirng speed and ruggedized device design that
HEXFEI’ Power MOSFEI'S are well Known tor, provides the
designerwith an extremely efficientand relia ble device for
use in a wide variety ofapplications.
The TCN220 Fullpak eliminates the need for additional
insulating hardware in commercial-ir/str-itat applicatio ns.
The moulding compound used provides a high isolation
capa bility and a Iowthermal resistance betweenthe taband
external heatsink. This isolation is equivalentto usinga 1 00
micron mica barrier with standa rd TCN22O product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screvvtixirng.
Absolute Maximum Ratings
PD- 95652
91OPbF
HEXFET® Power MOSFET
VDSS = 100V
RDS(on) = 0.026n
ID=31A
TO-220 FULLPAK
Parameter Max. Units
lo (t TC = 25°C Continuous Drain Current, Vos C) 10V 31
b C) Tc = 100°C Continuous Drain Current, l/ss @10V 22 A
bs, Pulsed Drain Current (OO) 190
Po (tfc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 W/°C
l/ss Gate-toSource Voltage 116 V
EAS Single Pulse Avalanche Energy®© 520 mJ
IAR Avalanche Current®© 29 A
EAR Repetitive Avalanche Energy® 6.3 m,)
dv/dt Peak Diode Recoverydv/dt (M) 5.0 V/ns
T: Operating Junction and -55 to+ 175
Ten; Storage Temperature Range T
SolderingTemperature, for10 seconds 300 (1 .6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rar JtmdiarttyCase - 2.4 "C/W
Rae Junction-toAmbient - 65 "C/W
1
7/26/04
IRLI2910PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 100 - - V Veg = ov, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoetrIcient - 0.12 - 1/f'C Referen ce to 25''C, ID = 1mA©
- - 0.026 Vss=10V,lr)=16A©
RDS(0n) Static Drain-toSource On-Resistance - - 0030 Q Ves = 5.0V, ln = 16A C4)
- - 0.040 Veg = 4.0V, ID = 14A G)
VGS(th) Gate ThresholdVoItage 1.0 - 2.0 V Ws = Vss, '0 = 250PA
gt, Forward Transconductance 28 - - S Ws = 50V, ID = 29A©
. - - 25 Ws = 100V, Vos = 0V
IDSS DraIn-to-Source Leakage Current _ - 250 HA Ws = 80V, Ves = ov, Tu = 150°C
loss Gate-to-Source Forward Leakage - - 100 n A Ws = 16V
Gate-to-Source Reverse Leakage - - -100 Veg = -16V
Qg Total Gate Charge - - 140 ID = 29A
Qgs Gate-to-Source Charge - - 20 n0 Ws = 80V
di Gate-to-Drain ("Miller")Charge - - 81 Veg = 5.0V. See Fig. 6 and 13 ©©
tdwn) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 100 - ns ID = 29A
tdiott) Turn-Off Delay Time - 49 - Re =1.4n,Ws = 5.0V
t, Fall Time 55 RD =1.79, See Fig. 10 ©©
. Between lead, D
Ln Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) g“
Ls IntemaISource Inductance - 7.5 - from package . G "m--
and centerofdie contact 3
0.55 Input Capacitance - 3700 - Vos = ov
Coss OutputCapacitance - 630 - pF Ws = 25V
Crss Reverse TransferCapacitance - 330 - f =1.0MHz, See Fig. 5©
C Drainto SinkCapacitance - 12 - f =1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 31 MOSF ET symbol D
(BodyDiode) showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD© - - 190 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25''C, IS = 16A, Vss = 0V ©
trr Reverse RecoveryTime - 240 350 ns Tu = 25''C, I; = 29A
a, Reverse RecoveryCharge - 1 .8 2.7 pC di/dt = 100A/us © ©
Notes:
C) Repetitive rating: pulse width limited by C4) Pulse width C 300ps: duty cycle C 2%.
max.junction temperature. ( See ra. 11 )
© VDD = 25V, starting Tu-- 25''C, L =1.2mH © t=60s, f=60Hz
Ro = 259. Us-- 29A. (See Figure 12)
© ISC, E 29A, di/dt E 490A/ps, VDD SV(BR)DSS‘ © Uses IRL2910 data and test conditions
Tu s 175°C
2
