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IRLI2203NPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR Rectifier
o Logic-Level Gate Drive
a Advanced Process Technology
0 Isolated Package
a High Voltage Isolation = 2.5KVRMS G)
o Sink to Lead Creepage Dist. = 4.8mm
0 Fully Avalanche Rated
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
PD- 95426
IRLI2203NPbF
HEXFET® Power MOSFET
D Vross = 30V
RDS(on) = 0.0079
'0 = 61A
extremely low on-resistance per silicon area. This 'iiiiirirq
benefit, combined with the fast switching speed and l
ruggedized device design that HEXFET Power MOSFETS tttl b,
arewell knownfor, provides the designerwith an extremely k) ', \
efficient and reliable device tor use in a wide variety ot
applications. TO-220 FULLPAK
The TCN220 Fullpak eliminates the need tor additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tata
and external heatsink. This isolation is eqcoivalerotto using
a 100 micron mica barrierwith standard T0220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
lo Cl Tc = 25°C Continuous Drain Current, Vss e 10V 61
b C) TC =100°C Continuous Drain Current, ve, C) 10V 43 A
W Pulsed Drain Current (i)tD 400
Po OTC, = 25°C Power Dissipation 47 W
Linear Derating Factor 0.31 Wf'C
MSS; Gate-toSource Voltage i: 16 V
EAS Single Pulse Avalanche Energy®© 390 m,)
(s Avalanche CurrentCot) 60 A
EAR Repetitive Avalanche Energy0 4.7 md
dv/dt Peak Diode Recovery dv/dt (Ms) 1.2 V/ns
T: Operating Junction and -55 to+ 175
Ten; Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ, Max. Units
Roc Junction-toCase - 3.2 TMI
Rem Junction-toAmbient - 65
1
06/17/04
IRLI2203NPbF International
TOR Rectifier
Electrical Characteristics ti) Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 -.. -- V l/ss = ov, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.035 - 1/f'C Reference to 25''C, ID = 1mA©
. . . -.- - 0.007 Ws =10V, b = 37A G)
RDS(on) Static Drain-to-Source On-Resistance - - 0.01 n Ves = 4.5V, ID = 31A ©
Vesnm Gate Threshold Voltage 1.0 - - V Ws = Vos, ID = 250PA
git Forward Transconductance 47 - - S Ws = 25V, ID = 60A©
bss Drain-ttrStxirce Leakage Current - - 25 pA VDS = MV, Vos = 0V
b - - 250 Ws = 24v. I/ss = ov, To = 150°C
v, Gate-to-Source Forward Leakage - - 100 n A Ws = 16V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -16V
Qg Total Gate Charge - -- 110 ID = 60A
Qgs Gate-to-Source Charge - - 31 n0 1hos = 24V
di GateiDrain ("Miller") Charge - - 57 Vos = 4.5V, See Fig. 6 and 13 ©©
tom) Tum-On Delay Time - 15 - VDD = 15V
' Rise Time - 210 - ns b = 60A
tdmffl Tum-Off Delay Time -._r- 29 - Rs = 1.89, Vss = 4.5V
tf Fall Time - 54 - RD = 0.259, See Fig. 10 ©©
. Between lead, D
Lo lntemal Drain Inductance - 4.5 - 6mm (0.25in.) "/50
"H from package "
LS Internal Source Inductance - 7.5 - and center of die contact I'
Ciss Input Capacitance - 3500 - I/ss, = 0V
Coss Output Capacitance - 1400 - pF Mos = 25V
Cree. Reverse Transfer Capacitance - 690 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol _ C)
(Body Diode) - - 61 A shoving the f -iei"
ISM Pulsed Source Current integral reverse 0 F.
(Body Diode) CMP - - 400 p-n junction diode. 6 s
I/sc, Diode Forward Voltage - .._...- 12 V To = 25''C, Is = 37A, Vos = 0V 6)
t, Reverse Recovery Time - 94 140 ns T: = 25°C, IF = 60A
er Reverse RecoveryCharge - 280 410 PC di/dt = 100A/ps ©©
ton Forward Tum-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+ LD)
Specification changes
Rev. # Parameters Old spec. New spec. Comments Revision Date
1 Veguh) (Max.) 2.5V No spec. Removed Vsslth) Max. Specification 11/1/96
1 VGS(Max.) t20 116 Decrease Vss Max. Specification 11/1/96
Notes:
C) Repetitive rating: pulse width limited by © 1313 3 60A, di/dt s 140A/ps, Vcc s; V(BRpss.
max. junction temperature. ( See fig. 11 ) Tug, 175°C
© VDD = 15V, starting TJ = 25''C, L = 220PH © Pulse width s 300ps; duty cycle E 2%.
Re = 25n, IAS = 60A, (See Figure 12) © t=60s, f=60Hz © Uses IRL2203N data and test conditions
2
