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IRLI2203G
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IrttetttatiiEtal
IOR Rectifier
PD - 9.1092A
|RL|2203G
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance D
Isolated Package
High Voltage Isolation = 2.5KVRMS©
Sink to Lead Creepage Dist. = 4.8mm
Logic-Level Gate Drive
RDS(on) Specified at VGS=5.0V & 10V
VDSS = 30V
RDS(on) = 0.010n
ID = 52AS
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely etMient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
TO-220 FULLPAK
or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 52©
ID @ To = 100°C Continuous Collector Current, VGS @ 10V 37 A
IDM Pulsed Drain Current OD 210
Po @Tc = 25''C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGs Gate-to-Source Voltage t20 V
EAs Single Pulse Avalanche Energy © 90 mi
IAR Avalanche CurrentCD 31 A
EAR Repetitive Avalanche Energy (D 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1rom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rax: Junction-to-Case - - 3.1 °C/W
RNA Junction-to-Ambient - -r.-- 65
Revision 1
IRLl2203G
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA, T J >-40°C
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.039 - V/''C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.010 Q VGS - 10V, ID = 31A ©
- - 0.015 VGS = 5.0V, ID = 26A (D
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 44 - - S VDS = 25V, ID = 55A
bss Drain-to-Source Leakage Current - - 25 pA Vros = 30V, VGS = 0V
- - 250 N/ns = 24V, VGS = 0V, T: = 150°C
Isss Gate-to-Source Forward Leakage - - 100 n A N/cs = 10V
Gate-to-Source Reverse Leakage - - -100 VGS = -10V
Qg Total Gate Charge _- _- 18550 :3; :2: VDS_ 24V, VG 5.0V
Qgs Gate-to-Source Charge - - 23 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 36 N/ss = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 9.1 - VDD = 15V
tr Rise Time - 110 - ID = 55A
tam) Turn-Off Delay Time - 110 - ns Rs = 5.09
tr Fall Time - 100 - RD = 0.269, See Fig. 10 6)
. Between lead, D
u, Internal Drain Inductance - 4.5 - 6mm (0.25in.) (ii'
nH from package i5 2
LS Internal Source Inductance - 7.5 - .
and center of die contact I
Ciss Input Capacitance - 3700 - VGS = 0V
Coss Output Capacitance - 1700 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 310 - f = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance - 12 - pF f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol _-"----, D
. - - 52© . A' 1 _ '
(Body Diode) A showing the j) 1 l,
ISM Pulsed Source Current integral reverse sr, (rt)
(Body Diode) (D - - 210 p-n junction diode. "‘\ /i'
VSD Diode Forward Voltage - - 1.6 V TJ = 25°C, Is = 31A, VGS = 0V ©
tn Reverse Recovery Time - 59 89 ns To = 25°C, IF = 55A
Qrr Reverse RecoveryCharge - 0.11 0.17 PC di/dt = 100A/ps (4)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (tumon is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting T: = 25''C, L = 20pH
Rs = 259, MS = 55A. (See Figure 12)
© Caculated continuous current based on maximum allowable junction temperature;
tor recomended current-handling of the package refer to Design Tip ' 93-4
TJs175°C
© ISD f 55A, di/dt s 100/Ups, VDD s V(BRmss,
© t=60s, f=60Hz
© Pulse width S 300ps; duty cycle 3 2%.
