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IRLHS6276TRPBF
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
International
Tart. Rectifier 1Nl,l,"Sf(52ifW1'0'
H EXFET© Power MOSFET
VDS 20 V TOP VIEW
Vas :12 V
RDS(on) max
(@Vss = 4.5V) 45 mn
RDS(on) max 62 mg - 4 n M
(@Vas = 2.5V) - tl _
T Ir, . men A i-,-rrji,',c,zir,il: L432
(@ c(Bottom) = 25 C) FET2 2mm x 2mm Dual PQFN
Applications
q Charge and discharge switch for battery application
q Load/System Switch
Features and Benefits
Features Resulting Benefits
Low RDSon (s 45mQ) Lower Conduction Losses
Low Thermal Resistance to PCB (S 19°C/W) Enable better thermal dissipation
Low Profile (S 1.0mm) results in Increased Power Density
lndustry-Standard Pinout => Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRLH86276TRPBF PQFN Dual 2mm x 2mm Tape and Reel 4000
lf2LHS6276TR2PBF PQFllDual-2mm-x-2mm TApe-and-Reel 409 EOL notice #259
Absolute Maximum Ratings
Parameter Max. Units
l/cs Drain-to-Source Voltage 20 V
l/ss Gate-to-Source Voltage t12
ID @ T, = 25°C Continuous Drain Current, Vss © 4.5V 4.5©
ID @ T, = 70°C Continuous Drain Current, Vos @ 4.5V 3.6©
ID @ TC(Bonom) = 25°C Continuous Drain Current, l/ss @ 4.5V 9.6© A
ID @ Tcesottom) = 100°C Continuous Drain Current, I/as @ 4.5V 6.1©
ID @ TC(Bottom) = 25°C Continuous Drain Current, Vas @ 4.5V (Package Limited) 3.4©
IDM Pulsed Drain Current C) 40
Pn ©T, = 25°C Power Dissipation C9 1.5 W
PD @quomm) = 25°C Power Dissipation C9 6.6
Linear Deratinq Factor (E) 0.012 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes C) through © are on page 2
fl © 2014 International Rectifier Submit Datasheet Feedback January13, 2014
IRLH362176PbF
Static @ T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 9.3 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 33 45 m9 Vss = 4.5V, ID = 3.4A ©©
- 46 62 Vos = 2.5V, ID = 3.4A ©©
Vesnh) Gate Threshold Voltage . . 0.5 0.8 1.1 V VDS = Vas, ID = 10PA
AVesun) Gate Threshold Voltage Coefficient - -3.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 Vos = 16V, l/ss = 0V
- - 150 pA Vos = 16v, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 12V
Gate-to-Source Reverse Leakage - - -1OO Vas = -12V
gfs Forward Transconductance 8.8 - - S Vos = 10V, ID = 3.4AC)
Qg Total Gate Charge © - 3.1 - Vos = 10V
Qgs Gate-to-Source Charge © - 0.22 - nC Vss = 4.5V
di Gate-to-Drain Charge © - 1.3 - ID = 3.4A© (See Fig.17 & 18)
Rs Gate Resistance - 4.0 - Q
tom Turn-On Delay Time - 4.4 - VDD = 10V, Ves = 4.5V
t, Rise Time - 9.3 - ns ID = 3.4A©
tion Turn-Off Delay Time - 10 - Rs=1.8Q
tf Fall Time - 4.9 - See Fig.15
Ciss Input Capacitance - 310 - I/ss = 0V
Coss Output Capacitance - 79 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 49 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current _ - 9.6© MOSFET symbol D
(BodLDiode) A showing the
ISM Pulsed Source Current _ - 40 integral reverse G
(Body Diode) (D p-n junction diode. s
l/so Diode Forward Voltage - - 1.2 V Tu = 25°C, ls = 3.4AO, VGS = 0V ©
trr Reverse Recovery Time - 5.2 7.8 ns To = 25°C, IF = 3.4AC), VDD = 10V
Qrr Reverse Recovery Charge - 5.0 7.5 no di/dt = 126A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
RQJC (Bottom) Junction-to-Case co - 19
RM; (Top) Junction-to-Case co - 175 o C NV
RBJA Junction-to-Ambient GD - 86
RNA (<10s) Junction-to-Ambient © - 69
Notes:
C) Repetitive rating; pulse width limited by max. junction temperature.
Q) Current limited by
package.
© Pulse width 3 400ps; duty cycle S 2%.
(ii) When mounted on 1 inch square copper board.
(9 R6 is measured at Ta of agpmxjmtely 900C.
co For DESIGN AID ONLY, not subject to production testing.
ce © 2014 International Rectifier
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January 13, 2014
