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IRLH5030TRPBF
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
International
IQQR Rectifier
|RLH5030PbF
HEXFET© Power MOSFET
Vos 1 00 V
RDS(on) max 9.9 m9
(@Vss = 4.5V)
th (typical) 44 nC
RG (typical) 1 -2
In 886)
(@Tmb = 25°C)
Applications
PQFN 5X6 mm
q Secondary Side Synchronous Rectification
Inverters for DC Motors
q DC-DC Brick Applications
Boost Converters
Features
Low RDSon ($9 . OmQ)
Low Thermal Resistance to PCB (S 0.8°C/W)
100% Rg tested
Low Profile (S 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type Standar Pack Orderable part number
Form Quantity
IRLH5030PBF PQFN 5mm x 6mm Tape and Reel 4000 IRLH5030TRPBF
Absolute Maximum Ratings
Parameter Max. Units
I/ss Gate-to-Source Voltage t16 V
ID @ TA = 25°C Continuous Drain Current, Ves © 10V 13
ID @ TA = 70°C Continuous Drain Current, Vss © 10V 11
ID © Tmb = 25°C Continuous Drain Current, l/ss @ 10V 88© A
ID @ TU, = 100°C Continuous Drain Current, I/ss © 10V 5663
lost Pulsed Drain Current (D 400
PD OT, = 25°C Power Dissipation © 3.6 W
PD @ Trnb = 25°C Power Dissipation s 156
Linear Derating Factor s 0.029 W/°C
TJ Operating Junction and -55 to + 150 I
Tsrs Storage Temperature Range
Notes OD through G) are on page 8
il © 2013 International Rectifier May 29, 2013
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDsS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 7.2 9.0 I/as = 10V, ID = 50A ©
- 7.9 9.9 mo Vss = 4.5V, ID = 50A co
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V
AVGSW Gate Threshold Voltage Coefficient - -5.9 - mV/°C Vos = Vas, ID = 150pA
loss Drain-to-Source Leakage Current - - 20 Vos = 100V, Vas = 0V
- - 250 pA Vos = 100V, l/as = 0V, T., = 125°C
less Gate-to-Source Forward Leakage - - 100 l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 nA I/ss = -16V
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 50A
as, Total Gate Charge - 94 - nC I/ss = 10V, Vos = 50V, ID = 50A
q, Total Gate Charge - 44 66
0931 Pre-Vth Gate-to-Source Charge - 7.7 - Vos = 50V
0952 Post-Vth Gate-to-Source Charge - 4.0 - Vas = 4.5V
di Gate-to-Drain Charge - 22 - nC ID = 50A
ngd, Gate Charge Overdrive - 10.3 - See Fig.17 & 18
st Switch Charge (Q952 + di) - 26 -
Qoss Output Charge - 20 - nC Vos = 16V, I/ss = 0V
Rs Gate Resistance - 1.2 - Q
ton) Turn-On Delay Time - 21 - VDD = 50V, Vss = 4.5V
t, Rise Time - 72 - ID = 50A
tdmm Turn-Off Delay Time - 41 - ns Rs=1.8Q
t, Fall Time - 41 - See Fig.15
Ciss Input Capacitance - 5185 - l/ss = 0V
Coss Output Capacitance - 300 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy C) - 230 mJ
|AR Avalanche Current OD - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 100 MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current 400 A integral reverse G
(Body Diode) C) - - p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 50A, I/ss = 0V (3
trr Reverse Recovery Time - 32 48 ns Tu = 25°C, IF = 50A, VDD = 50V
l Reverse Recovery Charge - 190 285 no di/dt = 500A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
ROJC-mb Junction-to-Mounting Base 0.5 0.8
ROJC (Top) Junction-to-Case © - 15 °C/W
RGJA Junction-to-Ambient G) - 35
FUA(<10s) Junction-to-Ambient © - 33
iil © 2013 International Rectifier May 29, 2013
