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IRLD120
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
b'ttettatiip,t'al
1:212 Rectifier
HEXFET® Power MOSFET
PD-9.634A
llRLD120
Dynamic dv/dt Rating
Repetitive Avalanche Rated
0 For Automatic Insertion
End Stackable
Logic-Level Gate Drive
o RDs(on)Specified at VGs=4V & 5V
o 175°C Operating Temperature
Voss = 1 00V
RDS(on) = 0.279
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vas © 5.0 V 1.3
In © To = 100°C Continuous Drain Current, Ves @ 5.0 V 0.94 A
IDM Pulsed Drain Current Ci) 10
Po @ To = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 WPC
Veg Gate-to-Source Voltage fc10 V
EAS Single Pulse Avalanche Energy 2 690 m)
lAn Avalanche Current (i) 1.3 A
EAR Repetitive Avalanche Energy (IC) 0.13 mJ
dv/dt Peak Diode Recovery dv/dt (E) 5.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range ac
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Ambient - - 120 °C/W
Eil!hit
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - _-....- V l/tss-HN, ID: 250prA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - _ VPC Reference to 25°C, ID: 1mA
HDS(on) Static Drain-to-Source On-Resistance - - 0.27 Q Vas-HMV, b=0.78A (E)
- - 0.38 Ves=4.0V, b--0.65A ©
VGS(th) Gate Threshold Voltage 1.0 -...- 2.0 V VDS=VGS. ID: 250PA
Ps Forward Transconductance 1.9 - - S Vos=50V, lo=0.78A ©
loss Drain-to-Source Leakage Current - - 25 pA 1hos---100V, Vas=0V
- - 250 Vos=80V, Vas=OV, TJ=1SOOC
less Gate-to-Source Forward Leakage - - 100 n A Vss--10V
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
Qg Total Gate Charge - - 12 lo=9.2A
Qgs Gate-to-Source Charge .--. - 3.0 nC VDs=8OV
di Gate-to-Drain ("Miller") Charge - .-.-. 7.1 Ves=5.0V See Fig. 6 and 13 ©
mum) Turn-On Delay Time - 9.8 - 1hur--50V
tr Rise Time - 64 - ns |D=9.2A
td(off) Turn-Off Delay Time - 21 - RG=9.OQ
ti Fall Time - 27 - RD=5.2£2 See Figure 10 @
Lo Internal Drain Inductance - 4.0 - itit,vr1(rl",lti1,f.')
nH from package G
Ls Internal Source Inductance - 6.0 - I and center of
die contact
Ciss Input Capacitance - 490 - veszov
Cass Output Capacitance - 150 - PF bbs-- 25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 1 3 MOSFET symbol D
(Body Diode) . A showing the F7:
ISM Pulsed Source Current - - 10 integral reverse G (trl
(Body Diode) (O p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ:25°C, 13:1.3A, Vss=OV ©
tn Reverse Recovery Time - 130 140 ns TJ=25°C, lp=9.2A
er Reverse Recovery Charge - 0.83 1.0 p1C di/dt=100A/ps ©
ton Forward Turn-Qn Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=153mH
Re=25§2, IAs=2.6A (See Figure 12)
S ISDSQZA, di/dts1 1OA/ps, VDDSV(BR)Dss,
TJS175°C
Co Pulse width f 300 us; duty cycle 32%.
