IRLD024 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageintetttaati9!?al
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q Dynamic dv/dt Rating
0 For Automatic ..
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q Dynamic dv/dt Rating
0 For Automatic ..
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IRLD024
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
PD-9.629A
International
EOR Rectifier IRLDO24
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o For Automatic Insertion D
End Stackable VDSS = 60V
Logic-Level Gate Drive
RDs(on) Specified at 1/Gs=4V & 51/ ' A RDSM) = 0.109
175°C Operating Temperature
Fast Switching
S ID = 2.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
Io © To = 25°C Continuous Drain Current, Vas @ 5.0 V 2.5
In @ To = 100°C Continuous Drain Current, Ves © 5.0 V 1.8 A
IDM Pulsed Drain Current co 20
Po @ To = 25°C Power Dissipation 1.3 m W
Linear Dealing Factor 0.0083 WPC
Ves Gate-to-Source Voltage fc10 V
EAS Single Pulse Avalanche Energy © 91 md
dv/dt Peak Diode Recovery dv/dt C3) 4.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter (-- Min. mlyp. " Max. Units
RQJA Junction-to-Ambient - - 120 oc/IN
W“'\"'."
IRLD024
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.10 n Vss=5.OV, Iro=1.5A ©
- - 0,14 VGs=4.0V, 10:1.3A ©
Vesnh) Gate Threshold Voltage 1.0 - 2.0 V Vios=Vss, ID: 250pA
grs Forward Transconductance 3.7 - - S VDs=25V, |D=1.5A C4)
loss Drain-to-Source Leakage Current - - 25 pt/k VDs=60V, VGS=OV
- - 250 VDs=48V, Vas--0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
l ch Total Gate Charge - - 18 |D=17A
1 095 Gate-to-Source Charge - - 4.5 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 12 Ves=5.0V See Fig. 6 and 13 If,
mam) Tum-On Delay Time - 11 - VDD=30V
tr Rise Time - 110 - ns b=17A
Tum) Tu m-Off Delay Time - 23 - Rs=9.0n
t, Fall Time - 41 - RD=1.7Q See Figure 10 G)
Ln Internal Drain Inductance - 4.0 - 2311213233212 ') L f
nH from package G@
Ls Internal Source Inductance - 6.0 - and center of
.die contact s
Ciss Input Capacitance - 870 - Vss=OV
Coss Output Capacitance - 360 - pF bbs-- 25V
Crss Reverse Transfer Capacitance - 53 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current _ - 2 5 MOSFET symbol D
(Body Diode) . A showing the 1:
ISM Pulsed Source Current - - 20 integral reverse G C,
(Body Diode) (i) p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ=25°C, Is=2.5A, VGs=0V (4)
trr Reverse Recovery Time - 110 260 ns QTJ=25°C, IF=17A
G, Reverse Recovery Charge - 0.49 1.5 ptC idi/dt=100A/us GD
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+luo)
Notes:
(f) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=16mH
RG=25§2, lAs=2.5A (See Figure 12)
© Isos17A, di/dts140A/us, VDDSV(BR)DSS.
TJS175°C
© Pulse width s; 300 us; duty cycle C2%.
