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IRLD014
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
llrttettatiip,t,tall
1:212 Rectifier,
HEXFET® Power MOSFET
PD-9.628A
IRLD014
o Dynamic dv/dt Rating
o For Automatic Insertion D
End Stackable
Logic-Level Gate Drive
VDSS = 60V
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
RDs(on) Specified at VGs=4V & 5V
175°C Operating Temperature
Fast Switching
S |D=1'7A
RDS(on) = 0.209
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
lo © Tc = 25°C Continuous Drain Current, Vas @ 5.0 V 1.7
to © To = 100°C Continuous Drain Current, Vas @ 5.0 V 1.2 A
IOM Pulsed Drain Current C) 14
PD © To = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 WPC
I/cs Gate-to-Source Voltage $10 V
EAS Single Pulse Avalanche Energy Ct) 490 md
dv/dt Peak Diode Recovery dv/dt (3) 4.5 V/ns
Tu Operating Junction and -55 to +175
Tsrs Storage Temperature Range _ ot2
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Ambient - 120 °C/W
IRLDO14
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=197mH
RG=2552, lAs=1.7A (See Figure 12)
Parameter Win. Typ. Max. Units Test Conditions
V(anmss Drain-to-Source Breakdown Voltage 60 - n V VGs=0V, ID: 250PA -
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.070 - VPC Reference to 25°C, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.20 n Vas---5.t7V, L--1.OA ©
- - 0.28 Ves=4.0V, ID=0.85A ©
VGS(1h) Gate Threshold Voltage I 1.0 - ' 2.0 V bbs--Vas, ID: 250uA
gfs Forward Transconductance 1.9 - (- - S Vos=25V, 10:1.0A ©
loss Drain-to-Source Leakage Current - - I 25 pA Vos-lov, VGS=OV
- - 250 Vos=48V, V(3s=OVI TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=1OV
Gate-to-Source Reverse Leakage - - -100 VGs=-10V
ch Total Gate Charge - - 8,4 |D=10A
figs _ Gate-to-Source Charge - - 2.6 no Vos=48V
di Gate-to-Drain ("Miller") Charge - - 6.4 Vas=5.0V See Fig. 6 and 13 (4)
td(on) 2 Turn-On Delay Time - 9.3 - VDD=30V
tr Rise Time -- 110 - ns |D=10A
tum) Turn-Off Delay Time - 17 - Rg=12§2
tf Fall Time - 26 - RD=2.BQ See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - ttit,vriirj2j'nd.') D
nH from package G@
Ls Internal Source Inductance - 6.0 - and center of
die contact s
Ciss Input Capacitance - 400 - Ves=0V
Coss Output Capacitance - 170 - pF VDs= 25V
Crss I Reverse Transfer Capacitance - 42 .._ f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 1 7 MOSFET symbol D
(Body Diode) ---4 . A showing the FF}:
ISM Pulsed Source Current - - 14 integral reverse G :3,
(Body Diode) co p-n junction diode. s
Vsro Diode Forward Voltage - - 1.6 V TJ=25°C, Is=1.7A, Var-IN ©
tn Reverse Recovery Time - 93 130 ns TJ=2500, Ip=10A
er Reverse Recovery Charge - 0.34 0.65 HO di/dt=100A/ws ©
ton Forward Turn-On Time Intrinsic iurn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
© Isos10A. di/dt-
TJS175°C
© Pulse width f 300 us; duty cycle 32%.
