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IRLBD59N04E
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 5-Lead package
PD -9391OB
IRLBD59N04E
HEXFET® Power MOSFET
International
Tart Rectifier
Integrated Temperature Sensing Diode
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Zener Gate Protected
VDSS = 40V
RDS(on) = 0.0189
ID = 59A©
Description
The |RLBD59N04E is a 40V, N-channel HEXFET®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
oftwo antiparallel electrically isolated poly-silicon diodes.
The |RLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expectfrom a HEXFET power MOSFET.
5 Lead-D2Pak
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59©
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 41 A
G, Pulsed Drain Current C) 230
PD @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.89 W/°C
VGS Gate-to-Source Voltage i 10 V
EAS Single Pulse Avalanche Energy© 340 mJ
IAR Avalanche CurrentCD 35 A
EAR Repetitive Avalanche Energy00 13 mJ
dv/dt Peak Diode Recovery dv/dt © 3.6 V/ns
ks VGS Clamp Current 1 50 mA
VESD Electrostatic Votage Rating© i 2.0 W
T J Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.12 °C/W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 4O
1
11/13/01
IRLBD59N04E International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)ross/AT: Breakdown Voltage Temp. Coemcient - 0.044 - V/°C Reference to 25°C, lo = 1mA
. . . - - 0.018 l/ss =10V, ID = 35A ©
Rrosom Static Drain-to-Source On-Resistance - - 0.021 Q VGS = 5.0V, ID = 30A ©
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vos = I/ss, ID = 250pA
Vss Clamp Voltage 10 - 20 V less = 20pA
gts Forward Transconductance 29 - - S Vos = 25V, ID = 35A
loss Drain-to-Source Leakage Current _- _- 22550 pA VS: , :2V V: , tf, To = 150°C
less Gate-to-Source Forward Leakage - - 1.0 p A VGS = 5.0V
Gate-to-Source Reverse Leakage - - -1.0 VGS = -5.0V
% Total Gate Charge - - 50 ID = 35A
ths Gate-to-Source Charge - - 13 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - - 18 Was = 5.0V, See Fig. 6 and 13 ©
Gon) Turn-On Delay Time - 7.8 - VDD = 20V
t, Rise Time - 84 - ns ID = 35A
td(off) Turn-Off Delay Time - 33 - Rs = 5.19,
t, Fall Time - 67 - l/ss = 5.0V, See Fig.10 CO
. Between lead, - D
Lo Intemal Drain Inductance - 2.0 - 6mm (0.25in.) Q:
nH from package G )
Ls Internal Source Inductance - 5.0 - and center of die contact s
Ciss Input Capacitance - 2190 - VGS = 0V
Coss Output Capacitance - 670 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 59© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 230 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25''C, ls = 35A, VGs = 0V ©
trr Reverse Recovery Time - 57 86 ns TJ = 25°C, IF = 35A
Qrr Reverse Recovery Charge - 84 130 nC dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Sense Diode Rating
Parameter Min. Typ. Max. Units Conditions
VFM Sense Diode Maximum Voltage Drop 675 - 725 mV IF = 250pA, TJ = 25°C
AW/AT: Sense Diode Temperature Coemcient -1.30 -1.40 -1.58 mV/°C IF = 250pA, (To = 25°C and 160°C)
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