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IRLBA3803P
30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
PD-91841C
International
TOR Rectifier IRLBA3803
HEXFET© Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology D VDSS = 30V
175°C Operating Temperature
Fast Switching -
Fully Avalanche Rated - " RDS(on) 00059
Purchase |RLBA3803/P for solder plated option. G
ID = 179A©
Description s
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical
outline and pinout as the industry standard TO-220 but can house a considerably
larger silicon die. It has increased current handling capability over both the TO-220
and the much larger TO-247 package. This makes it ideal to reduce component
count in multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline. Super - 220
This package has also been designed to meet automotive qualiMation standard
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V 179 ©
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 126© A
IDM Pulsed Drain Current C) 720
Po @Tc = 25°C Power Dissipation 270 W
Linear Derating Factor 1.8 Wl°C
I/ss Gate-to-Source Voltage 116 V
EAS Single Pulse Avalanche Energy©© 610 mJ
IAR Avalanche CurrentOS 71 A
EAR Repetitive Avalanche Energy© 27 mJ
dv/dt Peak Diode Recovery dv/dt SS 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.55
Recs Case-to-Sink, Flat, Greased Surface 0.5 - 'C/W
ReJA Junction-to-Ambient - 58
1
05/20/02
IRLBA3803
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient .-..-.- 0.052 .-..-.- V/°C Reference to 25°C, ID = ImAS
. . . - - 0.005 VGS =10V,ID = 71A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.009 n VGS = 4.5V, ID = 59A ©
VGS(th) Gate Threshold Voltage 1.0 - V Vros = VGs, ID = 250PA
gfs Fon/vard Transconductance 55 - - S VDs = 25V, ID = 71A©
loss Drain-to-Source Leakage Current -_- : 22550 pA VS: , '2f, 12:; 1(, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 N/ss = -16V
09 Total Gate Charge - - 140 ID = 71A
Qgs Gate-to-Source Charge - - 41 nC VDs = 24V
di Gate-to-Drain ("Miller") Charge - - 78 Ffas = 4.5V, See Fig. 6 and 13 (06)
td(on) Turn-On Delay Time - 14 - VDD = 15V
tr Rise Time - 230 - ID = 71A
tum) Turn-Off Delay Time - 29 - Rs = 1.39
tr Fall Time 35 R9 = 0.209, See Fig. 10 (96)
LD Internal Drain Inductance - 2.0 - nH t,',t),'C'f22,f)' E D)
LS Internal Source Inductance - 5.0 - from package . G
and center of die contact s
Ciss Input Capacitance - 5000 - VGs = 0V
Coss Output Capacitance - 1800 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 880 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 179© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 720 p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V To = 25°C, Is = 71A, VGS = 0V ©
trr Reverse Recovery Time - 120 180 ns To = 25°C, IF = 71A
Qrr Reverse Recovery Charge - 450 680 nC di/dt = 100A/ps (9(9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+k)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting To = 25°C, L = 180pH
Rs = 25n, IAS = 71A. (See Figure 12)
© Iso f 71A, di/dt s 130A/ps, V00 3 V(BR)DSS,
T " 175°C
© Pulse width S 300ps; duty cycle I 2%.
s Uses IRL3803 data and test conditions.
© Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip ' 93-4
